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MT46H128M16LFCK-5 IT:A

MT46H128M16LFCK-5 IT:A

  • 厂商:

    MICRON(镁光)

  • 封装:

    60-VFBGA

  • 描述:

    IC LPDDR SDRAM 2GBIT 60VBGA

  • 数据手册
  • 价格&库存
MT46H128M16LFCK-5 IT:A 数据手册
2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 – 32 Meg x 16 x 4 Banks x 4 Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 128 Meg x 16 (32 Meg x 16 x 4 banks) – 64 Meg x 32 (16 Meg x 32 x 4 banks) • Addressing – JEDEC-standard – Reduced page-size1 – 4-die stack reduced page-size2 – 2-die stack standard – 4-die stack standard • Plastic "green" package – 60-ball VFBGA (10mm x 11.5mm)3 – 90-ball VFBGA (10mm x 13mm)4 • PoP (plastic "green" package) – 168-ball VFBGA (12mm x 12mm)4 – 168-ball WFBGA (12mm x 12mm)4 – 168-ball WFBGA (12mm x 12mm)4 – 240-ball WFBGA (14mm x 14mm)4 • Timing – cycle time – 5ns @ CL = 3 (200 MHz) – 5.4ns @ CL = 3 (185 MHz) – 6ns @ CL = 3 (166 MHz) – 7.5ns @ CL = 3 (133 MHz) • Power – Standard IDD2/IDD6 • Operating temperature range – Commercial (0˚ to +70˚C) – Industrial (–40˚C to +85˚C) – Automotive (–40˚C to +105˚C)1 • Design revision • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • 4 internal banks for concurrent operation • Data masks (DM) for masking write data; one mask per byte • Programmable burst lengths (BL): 2, 4, 8, or 16 • Concurrent auto precharge option is supported • Auto refresh and self refresh modes • 1.8V LVCMOS-compatible inputs • Temperature-compensated self refresh (TCSR) • Partial-array self refresh (PASR) • Deep power-down (DPD) • Status read register (SRR) • Selectable output drive strength (DS) • Clock stop capability • 64ms refresh; 32ms for the automotive temperature range Table 1: Key Timing Parameters (CL = 3) Speed Grade Clock Rate Access Time -5 200 MHz 5.0ns -54 185 MHz 5.0ns -6 166 MHz 5.0ns -75 133 MHz 6.0ns PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Notes: 1 1. 2. 3. 4. Marking H 128M16 64M32 LF LG R4 L2 L4 CK CM JV KQ MA MC -5 -54 -6 -75 None None IT AT :A Contact factory for availability. Available in the 168-ball JV package only. Available only for x16 configuration. Available only for x32 configuration. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 2Gb: x16, x32 Mobile LPDDR SDRAM Features Table 2: Configuration Addressing – 2Gb Architecture Configuration 128 Meg x 16 64 Meg x 32 32 Meg x 16 x 4 banks 16 Meg x 32 x 4 banks Refresh count Row addressing Column addressing Reduced Page-Size Option 128 Meg x 16 Reduced Page-Size Option 64 Meg x 32 32 Meg x 16 x 4 banks 16 Meg x 32 x 4 banks 8K 8K 8K 8K 16K A[13:0] 16K A[13:0] 32K A[14:0] 32K A[14:0] 2K A11, A[9:0] 1K A[9:0] 1K A[9:0] 512 A[8:0] See Package Block Diagrams (page 17) for descriptions of signal connections and die configurations for each respective architecture. Figure 1: 2Gb Mobile LPDDR Part Numbering MT 46 H 64M32 LF CK -6 Micron Technology IT :A Design Revision :A = First generation Product Family Operating Temperature 46 = Mobile LPDDR Blank = Commercial (0°C to +70°C) Operating Voltage IT = Industrial (–40°C to +85°C) H = 1.8/1.8V AT = Automotive (–40°C to +105°C) Configuration Power 128 Meg x 16 Blank = Standard IDD2/IDD6 64 Meg x 32 128 Meg x 32 Cycle Time (CL = 3) 256 Meg x 32 -5 = 5ns tCK -54 = 5.4ns tCK Addressing -6 = 6ns tCK LF = JEDEC-standard addressing -75 = 7.5ns tCK L2 = 2-die stack standard addressing L4 = 4-die stack standard addressing Package Codes LG = Reduced page-size CK = 60-ball (10mm x 11.5mm) VFBGA, “green” R4 = 4-die stack reduced page-size addressing CM = 90-ball (10mm x 13mm) VFBGA, “green” JV = 168-ball (12mm x 12mm) VFBGA, “green” KQ = 168-ball (12mm x 12mm) WFBGA, “green” MA = 168-ball (12mm x 12mm) WFBGA, “green” MC = 240-ball (14mm x 14mm) WFBGA, “green” FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. Micron’s FBGA part marking decoder is available at www.micron.com/decoder. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Features Contents General Description ......................................................................................................................................... 8 Functional Block Diagrams ............................................................................................................................... 9 Ball Assignments ........................................................................................................................................... 11 Ball Descriptions ............................................................................................................................................ 15 Package Block Diagrams ................................................................................................................................. 17 Package Dimensions ...................................................................................................................................... 20 Electrical Specifications .................................................................................................................................. 26 Electrical Specifications – IDD Parameters ........................................................................................................ 29 Electrical Specifications – AC Operating Conditions ......................................................................................... 35 Output Drive Characteristics ........................................................................................................................... 40 Functional Description ................................................................................................................................... 43 Commands .................................................................................................................................................... 44 DESELECT ................................................................................................................................................ 45 NO OPERATION ........................................................................................................................................ 45 LOAD MODE REGISTER ............................................................................................................................ 45 ACTIVE ..................................................................................................................................................... 45 READ ........................................................................................................................................................ 46 WRITE ...................................................................................................................................................... 47 PRECHARGE ............................................................................................................................................. 48 BURST TERMINATE .................................................................................................................................. 49 AUTO REFRESH ........................................................................................................................................ 49 SELF REFRESH ........................................................................................................................................... 50 DEEP POWER-DOWN ................................................................................................................................ 50 Truth Tables ................................................................................................................................................... 51 State Diagram ................................................................................................................................................ 56 Initialization .................................................................................................................................................. 57 Standard Mode Register .................................................................................................................................. 60 Burst Length .............................................................................................................................................. 61 Burst Type ................................................................................................................................................. 61 CAS Latency .............................................................................................................................................. 62 Operating Mode ......................................................................................................................................... 63 Extended Mode Register ................................................................................................................................. 64 Temperature-Compensated Self Refresh .................................................................................................... 64 Partial-Array Self Refresh ........................................................................................................................... 65 Output Drive Strength ................................................................................................................................ 65 Status Read Register ....................................................................................................................................... 66 Bank/Row Activation ...................................................................................................................................... 68 READ Operation ............................................................................................................................................. 69 WRITE Operation ........................................................................................................................................... 80 PRECHARGE Operation .................................................................................................................................. 92 Auto Precharge ............................................................................................................................................... 92 Concurrent Auto Precharge ........................................................................................................................ 93 AUTO REFRESH Operation ............................................................................................................................. 98 SELF REFRESH Operation .............................................................................................................................. 99 Power-Down ................................................................................................................................................. 100 Deep Power-Down ................................................................................................................................... 102 Clock Change Frequency ............................................................................................................................... 104 Revision History ............................................................................................................................................ 105 Rev. M – 11/10 ........................................................................................................................................... 105 Rev. L – 09/10 ............................................................................................................................................ 105 PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Features Rev. K – 08/10 ............................................................................................................................................ 105 Rev. J – 06/10 ............................................................................................................................................. 105 Rev. H – 05/10 ........................................................................................................................................... 105 Rev. G – 04/10 ........................................................................................................................................... 105 Rev. F – 04/10 ............................................................................................................................................ 105 Rev. E – 03/10 ............................................................................................................................................ 105 Rev. D – 12/09 ........................................................................................................................................... 106 Rev. C – 09/09 ............................................................................................................................................ 106 Rev. B – 08/09 ............................................................................................................................................ 106 Rev. A – 07/09 ............................................................................................................................................ 106 PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Features List of Figures Figure 1: 2Gb Mobile LPDDR Part Numbering .................................................................................................. 2 Figure 2: Functional Block Diagram (x16) ......................................................................................................... 9 Figure 3: Functional Block Diagram (x32) ....................................................................................................... 10 Figure 4: 60-Ball VFBGA – Top View, x16 only ................................................................................................. 11 Figure 5: 90-Ball VFBGA – Top View, x32 only ................................................................................................. 12 Figure 6: 168-Ball FBGA – 12mm x 12mm (Top View), x32 only ........................................................................ 13 Figure 7: 240-Ball FBGA – 14mm x 14mm (Top View), x32 only ........................................................................ 14 Figure 8: Single Rank, Single Channel (1 Die) Package Block Diagram ............................................................. 17 Figure 9: Dual Rank, Single Channel (2 Die) Package Block Diagram ............................................................... 18 Figure 10: Dual Rank, Single Channel (4 Die) Package Block Diagram ............................................................. 19 Figure 11: 60-Ball VFBGA (10mm x 11.5mm), Package Code: CK ...................................................................... 20 Figure 12: 90-Ball VFBGA (10mm x 13mm), Package Code: CM ....................................................................... 21 Figure 13: 168-Ball VFBGA (12mm x 12mm), Package Code: JV ........................................................................ 22 Figure 14: 168-Ball WFBGA (12mm x 12mm), Package Code: KQ ..................................................................... 23 Figure 15: 168-Ball WFBGA (12mm x 12mm), Package Code: MA ..................................................................... 24 Figure 16: 240-Ball WFBGA (14mm x 14mm), Package Code: MC ..................................................................... 25 Figure 17: Typical Self Refresh Current vs. Temperature ................................................................................. 34 Figure 18: ACTIVE Command ........................................................................................................................ 46 Figure 19: READ Command ........................................................................................................................... 47 Figure 20: WRITE Command ......................................................................................................................... 48 Figure 21: PRECHARGE Command ................................................................................................................ 49 Figure 22: DEEP POWER-DOWN Command .................................................................................................. 50 Figure 23: Simplified State Diagram ............................................................................................................... 56 Figure 24: Initialize and Load Mode Registers ................................................................................................. 58 Figure 25: Alternate Initialization with CKE LOW ............................................................................................ 59 Figure 26: Standard Mode Register Definition ................................................................................................ 60 Figure 27: CAS Latency .................................................................................................................................. 63 Figure 28: Extended Mode Register ................................................................................................................ 64 Figure 29: Status Read Register Timing .......................................................................................................... 66 Figure 30: Status Register Definition .............................................................................................................. 67 Figure 31: READ Burst ................................................................................................................................... 70 Figure 32: Consecutive READ Bursts .............................................................................................................. 71 Figure 33: Nonconsecutive READ Bursts ........................................................................................................ 72 Figure 34: Random Read Accesses ................................................................................................................. 73 Figure 35: Terminating a READ Burst ............................................................................................................. 74 Figure 36: READ-to-WRITE ............................................................................................................................ 75 Figure 37: READ-to-PRECHARGE .................................................................................................................. 76 Figure 38: Data Output Timing – tDQSQ, tQH, and Data Valid Window (x16) ................................................... 77 Figure 39: Data Output Timing – tDQSQ, tQH, and Data Valid Window (x32) ................................................... 78 Figure 40: Data Output Timing – tAC and tDQSCK .......................................................................................... 79 Figure 41: Data Input Timing ......................................................................................................................... 81 Figure 42: Write – DM Operation ................................................................................................................... 82 Figure 43: WRITE Burst ................................................................................................................................. 83 Figure 44: Consecutive WRITE-to-WRITE ....................................................................................................... 84 Figure 45: Nonconsecutive WRITE-to-WRITE ................................................................................................. 84 Figure 46: Random WRITE Cycles .................................................................................................................. 85 Figure 47: WRITE-to-READ – Uninterrupting ................................................................................................. 86 Figure 48: WRITE-to-READ – Interrupting ...................................................................................................... 87 Figure 49: WRITE-to-READ – Odd Number of Data, Interrupting .................................................................... 88 Figure 50: WRITE-to-PRECHARGE – Uninterrupting ...................................................................................... 89 PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Features Figure 51: Figure 52: Figure 53: Figure 54: Figure 55: Figure 56: Figure 57: Figure 58: Figure 59: Figure 60: Figure 61: Figure 62: WRITE-to-PRECHARGE – Interrupting ........................................................................................... 90 WRITE-to-PRECHARGE – Odd Number of Data, Interrupting ......................................................... 91 Bank Read – With Auto Precharge .................................................................................................. 94 Bank Read – Without Auto Precharge ............................................................................................. 95 Bank Write – With Auto Precharge .................................................................................................. 96 Bank Write – Without Auto Precharge ............................................................................................. 97 Auto Refresh Mode ........................................................................................................................ 98 Self Refresh Mode ........................................................................................................................ 100 Power-Down Entry (in Active or Precharge Mode) ......................................................................... 101 Power-Down Mode (Active or Precharge) ...................................................................................... 102 Deep Power-Down Mode ............................................................................................................. 103 Clock Stop Mode .......................................................................................................................... 104 PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Features List of Tables Table 1: Key Timing Parameters (CL = 3) .......................................................................................................... 1 Table 2: Configuration Addressing – 2Gb .......................................................................................................... 2 Table 3: Ball Descriptions .............................................................................................................................. 15 Table 4: Absolute Maximum Ratings .............................................................................................................. 26 Table 5: AC/DC Electrical Characteristics and Operating Conditions ............................................................... 26 Table 6: Capacitance (x16, x32) ...................................................................................................................... 28 Table 7: IDD Specifications and Conditions, –40°C to +85°C (x16) ..................................................................... 29 Table 8: IDD Specifications and Conditions, –40°C to +85°C (x32) ..................................................................... 30 Table 9: IDD Specifications and Conditions, –40°C to +105°C (x16) ................................................................... 31 Table 10: IDD Specifications and Conditions, –40°C to +105°C (x32) ................................................................. 32 Table 11: IDD6 Specifications and Conditions ................................................................................................. 33 Table 12: Electrical Characteristics and Recommended AC Operating Conditions ............................................ 35 Table 13: Target Output Drive Characteristics (Full Strength) .......................................................................... 40 Table 14: Target Output Drive Characteristics (Three-Quarter Strength) .......................................................... 41 Table 15: Target Output Drive Characteristics (One-Half Strength) ................................................................. 42 Table 16: Truth Table – Commands ............................................................................................................... 44 Table 17: DM Operation Truth Table ............................................................................................................. 45 Table 18: Truth Table – Current State Bank n – Command to Bank n ............................................................... 51 Table 19: Truth Table – Current State Bank n – Command to Bank m .............................................................. 53 Table 20: Truth Table – CKE .......................................................................................................................... 55 Table 21: Burst Definition Table .................................................................................................................... 61 PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM General Description General Description The 2Gb Mobile low-power DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 2,147,483,648 bits. It is internally configured as a quad-bank DRAM. Each of the x16’s 536,870,912-bit banks is organized as 16,384 rows by 2048 columns by 16 bits. Each of the x32’s 536,870,912-bit banks is organized as 16,384 rows by 1024 columns by 32 bits. In the reduced page-size (LG) option, each of the x32's 536,870,912-bit banks is organized as 32,768 rows by 512 columns by 32 bits. In the reduced page-size (R4) option, each of the x16's 536,870,912-bit banks is organized as 32,768 rows by 1024 columns x 16 bits. Note: 1. Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ should be interpreted as any and all DQ collectively, unless specifically stated otherwise. Additionally, the x16 is divided into 2 bytes: the lower byte and the upper byte. For the lower byte (DQ[7:0]), DM refers to LDM and DQS refers to LDQS. For the upper byte (DQ[15:8]), DM refers to UDM and DQS refers to UDQS. The x32 is divided into 4 bytes. For DQ[7:0], DM refers to DM0 and DQS refers to DQS0. For DQ[15:8], DM refers to DM1 and DQS refers to DQS1. For DQ[23:16], DM refers to DM2 and DQS refers to DQS2. For DQ[31:24], DM refers to DM3 and DQS refers to DQS3. 2. Complete functionality is described throughout the document; any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements. 3. Any specific requirement takes precedence over a general statement. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Functional Block Diagrams Functional Block Diagrams Figure 2: Functional Block Diagram (x16) CKE CK# CK WE# CAS# RAS# Command decode CS# Control logic Bank 1 Refresh counter Bank 2 Bank 3 Standard mode register Extended mode register Bank 0 rowaddress latch and decoder Rowaddress Mux Bank 0 memory array Data 16 32 Read latch Sense amplifiers 16 16 MUX DRVRS 2 DQS generator DQ[15:0] COL 0 I/O gating DM mask logic 2 Address BA0, BA1 Address register 2 Bank control logic CK 32 Mask 32 Column decoder Columnaddress counter/ latch Write FIFO and drivers CK out CK in 4 32 2 DQS Input registers LDQS, UDQS 2 2 2 2 16 16 16 16 RCVRS 16 LDM, UDM Data CK 2 COL 0 1 PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Functional Block Diagrams Figure 3: Functional Block Diagram (x32) CKE CK# WE# CAS# RAS# Command decode CK CS# Control logic Bank 1 Refresh counter Bank 2 Bank 3 Standard mode register Extended mode register Bank 0 rowaddress latch and decoder Rowaddress MUX Bank 0 memory array Data 32 64 Read latch Sense amplifiers 32 32 MUX DRVRS 2 DQS generator DQ[31:0] COL 0 I/O gating DM mask logic 2 Address, BA0, BA1 Address register 2 Bank control logic CK 64 Mask 64 Column decoder Columnaddress counter/ latch Write FIFO and drivers CK out CK in 8 64 DQS Input registers 4 4 4 4 32 32 DQS0 DQS1 DQS2 DQS3 4 RCVRS 32 32 32 Data CK DM0 DM1 DM2 DM3 4 COL 0 1 PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Ball Assignments Ball Assignments Figure 4: 60-Ball VFBGA – Top View, x16 only 1 2 3 VSS DQ15 VDDQ 4 5 6 7 8 9 VSSQ VDDQ DQ0 VDD DQ13 DQ14 DQ1 DQ2 VSSQ VSSQ DQ11 DQ12 DQ3 DQ4 VDDQ VDDQ DQ9 DQ10 DQ5 DQ6 TEST1 VSSQ UDQS DQ8 DQ7 LDQS VDDQ VSS UDM NC A13 LDM VDD CKE CK CK# WE# CAS# RAS# A9 A11 A12 CS# BA0 BA1 A6 A7 A8 A10/AP A0 A1 VSS A4 A5 A2 A3 VDD A B C D E F G H J K Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. D9 is a test pin that must be tied to VSS or VSSQ in normal operations. 2. Unused address pins become RFU. 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Ball Assignments Figure 5: 90-Ball VFBGA – Top View, x32 only 1 2 3 VSS DQ31 VDDQ 4 5 6 7 8 9 VSSQ VDDQ DQ16 VDD DQ29 DQ30 DQ17 DQ18 VSSQ VSSQ DQ27 DQ28 DQ19 DQ20 VDDQ VDDQ DQ25 DQ26 DQ21 DQ22 TEST1 VSSQ DQS3 DQ24 DQ23 DQS2 VDDQ VDD DM3 NC A13 DM2 VSS CKE CK CK# WE# CAS# RAS# A9 A11 A12 CS# BA0 BA1 A6 A7 A8 A10/AP A0 A1 A4 DM1 A5 A2 DM0 A3 VSSQ DQS1 DQ8 DQ7 DQS0 VDDQ VDDQ DQ9 DQ10 DQ5 DQ6 VSSQ VSSQ DQ11 DQ12 DQ3 DQ4 VDDQ VDDQ DQ13 DQ14 DQ1 DQ2 VSSQ VSS DQ15 VSSQ VDDQ DQ0 VDD A B C D E F G H J K L M N P R Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. D9 is a test pin that must be tied to VSS or VSSQ in normal operations. 2. Unused address pins become RFU. 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Ball Assignments Figure 6: 168-Ball FBGA – 12mm x 12mm (Top View), x32 only 18 19 20 21 22 23 11 12 13 CK VDD DQ9 DQ11 VDDQ DQ13 DM1 DQ25 DNU DNU A CK# VSS DQ8 DQ10 VSSQ DQ12 DQS1 VSSQ DQ14 DQS3 DQ24 DNU DNU B DQS0 VSSQ VDDQ C DQ7 DQ6 DQ26 DQ27 D E VDDQ VSSQ DQ28 DQ29 E F DQ5 DQ4 VSSQ VDDQ F G DQ3 DQ2 DQ30 DQ31 G H VDDQ VSSQ J DQ1 DQ0 K VDD VSS L NC1 VSS CAS# RAS# L M NC NC CS0# CS1# M N NC NC A0 A1 N P NC1 VSS A2 A3 P R NC NC A4 A5 R T NC NC A6 A7 T U NC1 VSS A8 A9 U V NC NC A10 A11 V W NC NC A12 A13 W Y NC NC A14 VDD Y AA NC1 VSS VSS VDD AA AB DNU DNU INC NC VSS NC NC VSS NC NC NC NC VSS VSS NC NC NC NC NC VSS BA0 DNU DNU AB AC DNU DNU NC NC NC1 NC NC NC1 NC NC NC NC NC1 TQ NC NC NC NC NC NC BA1 DNU DNU AC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 3 4 A DNU DNU DQ17 VDDQ DQ19 DM2 B DNU DNU DQ16 VSSQ DQ18 DQS2 VSSQ DQ20 DQ22 VSSQ C DM0 D 7 8 10 2 5 6 9 1 VDDQ DQ21 DQ23 VDDQ 14 15 16 17 VDDQ DQ15 DM3 VSS VDD CKE0 CKE1 VSS Top View – Ball Down Note: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN LPDDR Supply WE# H J K Ground 1. Although not bonded to the die, these pins may be connected on the package substrate. 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Ball Assignments Figure 7: 240-Ball FBGA – 14mm x 14mm (Top View), x32 only 1 2 3 A DNU VSS VDD B DNU DNU C DNU DNU D DNU DNU E DNU DNU F DNU DNU G DNU DNU H DNU DNU J DNU DNU K DNU DNU L DNU DNU M DNU DNU N DNU DNU P DNU DNU R DNU DNU T DNU DNU U DNU DNU V DNU DNU W DNU DNU Y DNU DNU AA DNU DNU AB DNU DNU AC DNU DNU AD DNU DNU AE DNU DNU AF DNU DNU AG DNU VSS 1 2 4 5 6 7 8 9 10 11 12 13 14 15 16 DQ31 VDDQ VSSQ DQ26 DQ24 DQS3 DM3 DQ23 DQ21 VSSQ VDDQ DQ16 VSSQ VSSQ DQ30 DQ29 DQ27 VDDQ VSSQ DQ28 DQ25 17 VSS VDDQ DM2 DQ18 DQS2 19 20 21 22 23 24 26 27 VSSQ DNU A DNU VSS B DM0 VDD C VDDQ DNU D VSSQ DQS0 DQ7 E DQ6 VDDQ F DQ4 VSSQ G DQ3 DQ2 H VDDQ DQ1 DQ0 J VSSQ VDD K DNU DNU VSS L 25 DNU DNU VDDQ VSSQ DQ15 DQ13 VSSQ VDDQ DNU DNU VSSQ DQ22 DQ20 DQ19 DQ17 DNU VDDQ VDDQ 18 VDD DNU DQS1 DQ14 DQ12 DQ11 DQ9 VDDQ DM1 DQ8 DQ10 DNU DQ5 DNU DNU DNU DNU DNU DNU DNU DNU DNU DNU M DNU DNU DNU N DNU DNU P DNU DNU DNU R DNU DNU T DNU DNU DNU U DNU DNU V DNU DNU DNU W DNU DNU Y DNU DNU DNU AA DNU DNU AB A14 DNU AC A13 A3 AD A2 A1 AE A15 DNU DNU DNU DNU DNU DNU DNU DNU DNU DNU DNU VSS A5 A7 VDD VSS VDD DNU DNU DNU DNU DNU DNU DNU DNU A9 A8 VSS 3 4 11 12 13 14 5 6 PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 7 DNU 8 9 VDD 10 A4 A6 VSS TQ A12 VSS CAS# VDD BA0 A0 VDD DNU AF CKE1 CS#1 WE# VDD RAS# DNU BA1 A10 VSS DNU AG 24 25 26 27 VDD A11 VDD CK CKE0 CS#0 DNU VSS CK# 15 16 17 18 19 20 21 22 23 Top View – Ball Down LPDDR Supply Ground 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Ball Descriptions Ball Descriptions The ball descriptions table is a comprehensive list of all possible balls for all supported packages. Not all balls listed are supported for a given package. Table 3: Ball Descriptions Symbol Type Description CK, CK# Input Clock: CK is the system clock input. CK and CK# are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Input and output data is referenced to the crossing of CK and CK# (both directions of the crossing). CKE CKE0, CKE1 Input Clock enable: CKE HIGH activates, and CKE LOW deactivates, the internal clock signals, input buffers, and output drivers. Taking CKE LOW enables PRECHARGE power-down and SELF REFRESH operations (all banks idle), or ACTIVE power-down (row active in any bank). CKE is synchronous for all functions except SELF REFRESH exit. All input buffers (except CKE) are disabled during power-down and self refresh modes. CKE0 is used for a single LPDDR product. CKE1 is used for dual LPDDR products and is considered RFU for single LPDDR MCPs. CS# CS0#, CS1# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external bank selection on systems with multiple banks. CS# is considered part of the command code. CS0# is used for a single LPDDR product. CS1# is used for dual LPDDR products and is considered RFU for single LPDDR MCPs. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered. UDM, LDM (x16) DM[3:0] (x32) Input Input data mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM balls are input-only, the DM loading is designed to match that of DQ and DQS balls. BA0, BA1 Input Bank address inputs: BA0 and BA1 define to which bank an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA0 and BA1 also determine which mode register is loaded during a LOAD MODE REGISTER command. A[13:0] Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ or WRITE commands, to select one location out of the memory array in the respective bank. During a PRECHARGE command, A10 determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA0, BA1) or all banks (A10 HIGH). The address inputs also provide the opcode during a LOAD MODE REGISTER command. The maximum address range is dependent upon configuration. Unused address balls become RFU. Test pin: Must be tied to VSS or VSSQ in normal operations. TEST Input DQ[15:0] (x16) DQ[31:0] (x32) Input/ output Data input/output: Data bus for x16 and x32. LDQS, UDQS (x16) DQS[3:0] (x32) Input/ output Data strobe: Output with read data, input with write data. DQS is edge-aligned with read data, center-aligned in write data. It is used to capture data. TQ Output Temperature sensor output: TQ HIGH when LPDDR TJ exceeds 85°C. VDDQ Supply DQ power supply. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Ball Descriptions Table 3: Ball Descriptions (Continued) Symbol Type Description VSSQ Supply DQ ground. VDD Supply Power supply. VSS Supply Ground. NC – No connect: May be left unconnected. RFU – Reserved for future use. Balls marked RFU may or may not be connected internally. These balls should not be used. Contact factory for details. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Package Block Diagrams Package Block Diagrams Figure 8: Single Rank, Single Channel (1 Die) Package Block Diagram VDD VDDQ VSS VSSQ CS0# WE# CKE0 CK LPDDR CAS# CK# Die 0 RAS# Address BA0, BA1 DQ[31:0] DQS[3:0] DM[3:0] PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Package Block Diagrams Figure 9: Dual Rank, Single Channel (2 Die) Package Block Diagram VDD VDDQ VSS VSSQ CS0# WE# CKE0 LPDDR CAS# Die 0 RAS# CK CK# Address BA0, BA1 DQ[31:0], DQS[3:0] LPDDR Die 1 CKE1 CS1# DM[3:0] PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Package Block Diagrams Figure 10: Dual Rank, Single Channel (4 Die) Package Block Diagram VDD VDDQ VSS VSSQ CS0# WE# CKE0 LPDDR LPDDR CAS# Die 0 Die 1 RAS# CK CK# DQ[31:16], DQS[3:2] Address BA0, BA1 DQ[15:0], DQS[1:0] LPDDR LPDDR Die 2 Die 3 CKE1 CS1# DM[1:0] PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN DM[3:2] 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Package Dimensions Package Dimensions Figure 11: 60-Ball VFBGA (10mm x 11.5mm), Package Code: CK 0.65 ±0.05 Seating plane 0.1 A A Solder ball material: SAC105 (98.5% Sn, 1% Ag, 0.5% Cu) 60X Ø0.45 Dimensions apply to solder balls post-reflow. The pre-reflow balls are Ø0.42 on Ø0.4 SMD ball pads. Substrate material: plastic laminate Mold compound: epoxy novolac 10 ±0.1 5 ±0.05 9 8 7 3 2 Ball A1 ID 1 A B Ball A1 ID 5.75 ±0.05 C 3.6 D E 7.2 11.5 ±0.1 F G H J 0.8 TYP K 0.8 TYP 3.2 6.4 Note: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1.0 MAX 1. All dimensions are in millimeters. 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Package Dimensions Figure 12: 90-Ball VFBGA (10mm x 13mm), Package Code: CM 0.65 ±0.05 Seating plane A 0.1 A 90X Ø0.45 Dimensions apply to solder balls post-reflow. The pre-reflow balls are Ø0.42 on Ø0.4 SMD ball pads. Solder ball material: SAC105 (98.5% Sn, 1% Ag, 0.5% Cu) Substrate material: plastic laminate 10 ±0.1 Mold compound: epoxy novolac Ball A1 ID 5 ±0.05 9 8 7 3 2 Ball A1 ID 1 A B C D 5.6 6.5 ±0.05 E F G 11.2 13 ±0.1 H J K L M N P 0.8 TYP R 0.8 TYP 3.2 6.4 Note: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1.0 MAX 1. All dimensions are in millimeters. 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Package Dimensions Figure 13: 168-Ball VFBGA (12mm x 12mm), Package Code: JV Seating plane 0.08 A 0.68 ±0.05 A 168X Ø0.34 Solder ball material: SAC105. Dimensions apply to solder balls postreflow on Ø0.28 SMD ball pads. Ball A1 ID Ball A1 ID 23 22 21 20 19 18 17 16 15 14 13 12 1110 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R T U V W Y AA AB AC 11 CTR 12 ±0.1 0.5 TYP 0.5 TYP 1.0 MAX 11 CTR 0.23 MIN 12 ±0.1 Note: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. All dimensions are in millimeters. 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Package Dimensions Figure 14: 168-Ball WFBGA (12mm x 12mm), Package Code: KQ Seating plane 0.08 A 0.43 ±0.05 A 168X Ø0.34 Solder ball material: SAC105. Dimensions apply to solder balls postreflow on Ø0.28 SMD ball pads. Ball A1 ID Ball A1 ID 23 22 21 20 19 18 17 16 15 14 13 12 1110 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R T U V W Y AA AB AC 11 CTR 12 ±0.1 0.5 TYP 0.5 TYP 0.75 MAX 11 CTR 0.23 MIN 12 ±0.1 Note: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. All dimensions are in millimeters. 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Package Dimensions Figure 15: 168-Ball WFBGA (12mm x 12mm), Package Code: MA Seating plane 0.08 A 0.38 ±0.05 A 168X Ø0.34 Solder ball material: SAC105. Dimensions apply to solder balls postreflow on Ø0.28 SMD ball pads. Ball A1 ID Ball A1 ID 23 22 21 20 19 18 17 16 15 14 13 12 1110 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R T U V W Y AA AB AC 11 CTR 12 ±0.1 0.5 TYP 0.5 TYP 0.7 MAX 11 CTR 0.23 MIN 12 ±0.1 Note: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. All dimensions are in millimeters. 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Package Dimensions Figure 16: 240-Ball WFBGA (14mm x 14mm), Package Code: MC Seating plane A 0.48 ±0.05 0.08 A 240X Ø0.34 Solder ball material: LF35 (98.25% Sn, 1.2% Ag, 0.5% Cu, 0.05% Ni). Dimensions apply to solder balls post-reflow on Ø0.27 SMD ball pads. 14 ±0.1 14 ±0.1 Ball A1 ID Ball A1 ID 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R T U V W Y AA AB AC AD AE AF AG 13.0 CTR 0.5 TYP 0.5 TYP 0.8 MAX 13.0 CTR Note: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 0.24 MIN 1. All dimensions are in millimeters. 25 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications Electrical Specifications Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Table 4: Absolute Maximum Ratings Note 1 applies to all parameters in this table Parameter Symbol Min Max Unit VDD/VDDQ supply voltage relative to VSS VDD/VDDQ –1.0 2.4 V Voltage on any pin relative to VSS VIN –0.5 2.4 or (VDDQ + 0.3V), whichever is less V Storage temperature (plastic) TSTG –55 150 ˚C Note: 1. VDD and VDDQ must be within 300mV of each other at all times. VDDQ must not exceed VDD. Table 5: AC/DC Electrical Characteristics and Operating Conditions Notes 1–5 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70–1.95V Parameter/Condition Symbol Min Max Unit Notes Supply voltage VDD 1.70 1.95 V 6, 7 I/O supply voltage VDDQ 1.70 1.95 V 6, 7 Input voltage high VIH 0.8 × VDDQ VDDQ + 0.3 V 8, 9 Input voltage low VIL –0.3 0.2 × VDDQ V 8, 9 VIN –0.3 VDDQ + 0.3 V 10 DC input differential voltage VID(DC) 0.4 × VDDQ VDDQ + 0.6 V 10, 11 AC input differential voltage VID(AC) 0.6 × VDDQ VDDQ + 0.6 V 10, 11 VIX 0.4 × VDDQ 0.6 × VDDQ V 10, 12 DC input high voltage VIH(DC) 0.7 × VDDQ VDDQ + 0.3 V 8, 9, 13 DC input low voltage VIL(DC) –0.3 0.3 × VDDQ V 8, 9, 13 AC input high voltage VIH(AC) 0.8 × VDDQ VDDQ + 0.3 V 8, 9, 13 AC input low voltage VIL(AC) –0.3 0.2 × VDDQ V 8, 9, 13 DC output high voltage: Logic 1 (IOH = –0.1mA) VOH 0.9 × VDDQ – V DC output low voltage: Logic 0 (IOL = 0.1mA) VOL – 0.1 × VDDQ V II –1 1 μA Address and command inputs Clock inputs (CK, CK#) DC input voltage AC differential crossing voltage Data inputs Data outputs Leakage current Input leakage current Any input 0V ≤ VIN ≤ VDD (All other pins not under test = 0V) PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 26 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications Table 5: AC/DC Electrical Characteristics and Operating Conditions (Continued) Notes 1–5 apply to all parameters/conditions in this table; VDD/VDDQ = 1.70–1.95V Parameter/Condition Symbol Min Max Unit IOZ –1.5 1.5 μA Commercial TA 0 70 ˚C Industrial TA –40 85 ˚C Automotive TA –40 105 ˚C Output leakage current (DQ are disabled; 0V ≤ VOUT ≤ VDDQ) Notes Operating temperature Notes: 1. All voltages referenced to VSS. 2. All parameters assume proper device initialization. 3. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 4. Outputs measured with equivalent load; transmission line delay is assumed to be very small: I/O 50 20pF Full drive strength I/O 50 10pF Half drive strength 5. Timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VDDQ/2 (or to the crossing point for CK/CK#). The output timing reference voltage level is VDDQ/2. 6. Any positive glitch must be less than one-third of the clock cycle and not more than +200mV or 2.0V, whichever is less. Any negative glitch must be less than one-third of the clock cycle and not exceed either –150mV or +1.6V, whichever is more positive. 7. VDD and VDDQ must track each other and VDDQ must be less than or equal to VDD. 8. To maintain a valid level, the transitioning edge of the input must: 8a. Sustain a constant slew rate from the current AC level through to the target AC level, VIL(AC) Or VIH(AC). 8b. Reach at least the target AC level. 8c. After the AC target level is reached, continue to maintain at least the target DC level, VIL(DC) or VIH(DC). 9. VIH overshoot: VIHmax = VDDQ + 1.0V for a pulse width ≤3ns and the pulse width cannot be greater than one-third of the cycle rate. VIL undershoot: VILmin = –1.0V for a pulse width ≤3ns and the pulse width cannot be greater than one-third of the cycle rate. 10. CK and CK# input slew rate must be ≥1 V/ns (2 V/ns if measured differentially). 11. VID is the magnitude of the difference between the input level on CK and the input level on CK#. 12. The value of VIX is expected to equal VDDQ/2 of the transmitting device and must track variations in the DC level of the same. 13. DQ and DM input slew rates must not deviate from DQS by more than 10%. 50ps must be added to tDS and tDH for each 100 mV/ns reduction in slew rate. If slew rate exceeds 4 V/ns, functionality is uncertain. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 27 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications Table 6: Capacitance (x16, x32) Note 1 applies to all the parameters in this table Parameter Symbol Min Max Unit Input capacitance: CK, CK# CCK Delta input capacitance: CK, CK# CDCK 1.5 3.5 pF – 0.25 pF Input capacitance: command and address CI 1.5 3.5 pF Delta input capacitance: command and address CDI – 0.5 pF Input/output capacitance: DQ, DQS, DM CIO 2.0 4.5 pF Delta input/output capacitance: DQ, DQS, DM CDIO – 0.5 pF Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Notes 2 2 3 1. This parameter is sampled. VDD/VDDQ = 1.70–1.95V, f = 100 MHz, TA = 25˚C, VOUT(DC) = VDDQ/2, VOUT (peak-to-peak) = 0.2V. DM input is grouped with I/O pins, reflecting the fact that they are matched in loading. 2. The input capacitance per pin group will not differ by more than this maximum amount for any given device. 3. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maximum amount for any given device. 28 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications – IDD Parameters Electrical Specifications – IDD Parameters Table 7: IDD Specifications and Conditions, –40°C to +85°C (x16) Notes 1–5 apply to all the parameters/conditions in this table; VDD/VDDQ = 1.70–1.95V Max Symbol -5 -54 -6 -75 Unit Notes Operating 1 bank active precharge current: tRC = tRC (MIN); tCK = tCK (MIN); CKE is HIGH; CS is HIGH between valid commands; Address inputs are switching every 2 clock cycles; Data bus inputs are stable Parameter/Condition IDD0 100 100 80 70 mA 6 Precharge power-down standby current: All banks idle; CKE is LOW; CS is HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD2P 900 900 900 900 μA 7, 8 Precharge power-down standby current: Clock stopped; All banks idle; CKE is LOW; CS is HIGH; CK = LOW, CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD2PS 900 900 900 900 μA 7 Precharge nonpower-down standby current: All banks idle; CKE = HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD2N 15 15 15 12 mA 9 Precharge nonpower-down standby current: Clock stopped; All banks idle; CKE = HIGH; CS = HIGH; CK = LOW, CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD2NS 9 9 8 8 mA 9 Active power-down standby current: 1 bank active; CKE = LOW; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD3P 5 5 5 5 mA 8 Active power-down standby current: Clock stopped; 1 bank active; CKE = LOW; CS = HIGH; CK = LOW; CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD3PS 5 5 5 5 mA Active nonpower-down standby: 1 bank active; CKE = HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD3N 17 17 16 15 mA 6 Active nonpower-down standby: Clock stopped; 1 bank active; CKE = HIGH; CS = HIGH; CK = LOW; CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD3NS 14 14 13 12 mA 6 Operating burst read: 1 bank active; BL = 4; tCK = tCK (MIN); Continuous READ bursts; Iout = 0mA; Address inputs are switching every 2 clock cycles; 50% data changing each burst IDD4R 130 125 115 105 mA 6 Operating burst write: 1 bank active; BL = 4; tCK = tCK (MIN); Continuous WRITE bursts; Address inputs are switching; 50% data changing each burst IDD4W 130 125 115 105 mA 6 Auto refresh: Burst refresh; CKE = HIGH; Address and control inputs are switching; Data bus inputs are stable tRFC = 138ns IDD5 170 170 170 170 mA 10 tRFC = tREFI IDD5A 12 12 12 12 mA 10, 11 IDD8 10 10 10 10 μA 7, 13 Deep power-down current: Address and control balls are stable; Data bus inputs are stable PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 29 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications – IDD Parameters Table 8: IDD Specifications and Conditions, –40°C to +85°C (x32) Notes 1–5 apply to all the parameters/conditions in this table; VDD/VDDQ = 1.70–1.95V Max Parameter/Condition Symbol -5 -54 -6 -75 Unit Notes Operating 1 bank active precharge current: (MIN); = tCK (MIN); CKE is HIGH; CS is HIGH between valid commands; Address inputs are switching every 2 clock cycles; Data bus inputs are stable IDD0 100 100 80 70 mA 6 Precharge power-down standby current: All banks idle; CKE is LOW; CS is HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD2P 900 900 900 900 μA 7, 8 Precharge power-down standby current: Clock stopped; All banks idle; CKE is LOW; CS is HIGH, CK = LOW, CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD2PS 900 900 900 900 μA 7 Precharge nonpower-down standby current: All banks idle; CKE = HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD2N 15 15 15 12 mA 9 Precharge nonpower-down standby current: Clock stopped; All banks idle; CKE = HIGH; CS = HIGH; CK = LOW, CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD2NS 9 9 8 8 mA 9 Active power-down standby current: 1 bank active; CKE = LOW; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD3P 5 5 5 5 mA 8 Active power-down standby current: Clock stopped; 1 bank active; CKE = LOW; CS = HIGH; CK = LOW; CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD3PS 5 5 5 5 mA Active nonpower-down standby: 1 bank active; CKE = HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD3N 17 17 16 15 mA 6 Active nonpower-down standby: Clock stopped; 1 bank active; CKE = HIGH; CS = HIGH; CK = LOW; CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD3NS 14 14 13 12 mA 6 Operating burst read: 1 bank active; BL = 4; CL = 3; tCK = tCK (MIN); Continuous READ bursts; Iout = 0mA; Address inputs are switching every 2 clock cycles; 50% data changing each burst IDD4R 150 145 140 120 mA 6 Operating burst write: One bank active; BL = 4; tCK = tCK (MIN); Continuous WRITE bursts; Address inputs are switching; 50% data changing each burst IDD4W 150 145 140 120 mA 6 tRC Auto refresh: Burst refresh; CKE = HIGH; Address and control inputs are switching; Data bus inputs are stable = tRC tCK tRFC = 138ns IDD5 170 170 170 170 mA 10 tRFC tREFI IDD5A 12 12 12 12 mA 10, 11 IDD8 10 10 10 10 μA 7, 13 = Deep power-down current: Address and control pins are stable; Data bus inputs are stable PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 30 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications – IDD Parameters Table 9: IDD Specifications and Conditions, –40°C to +105°C (x16) Notes 1–5 apply to all the parameters/conditions in this table; VDD/VDDQ = 1.70–1.95V Max Parameter/Condition Symbol -5 -54 -6 -75 Unit Notes Operating 1 bank active precharge current: (MIN); = tCK (MIN); CKE is HIGH; CS is HIGH between valid commands; Address inputs are switching every 2 clock cycles; Data bus inputs are stable IDD0 100 100 80 70 mA 6 Precharge power-down standby current: All banks idle; CKE is LOW; CS is HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD2P 1500 1500 1500 1500 μA 7, 8 Precharge power-down standby current: Clock stopped; All banks idle; CKE is LOW; CS is HIGH; CK = LOW, CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD2PS 1500 1500 1500 1500 μA 7 Precharge nonpower-down standby current: All banks idle; CKE = HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD2N 19 19 19 16 mA 9 Precharge nonpower-down standby current: Clock stopped; All banks idle; CKE = HIGH; CS = HIGH; CK = LOW, CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD2NS 13 13 12 12 mA 9 Active power-down standby current: 1 bank active; CKE = LOW; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD3P 9 9 9 9 mA 8 Active power-down standby current: Clock stopped; 1 bank active; CKE = LOW; CS = HIGH; CK = LOW; CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD3PS 9 9 9 9 mA Active nonpower-down standby: 1 bank active; CKE = HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD3N 21 21 20 19 mA 6 Active nonpower-down standby: Clock stopped; 1 bank active; CKE = HIGH; CS = HIGH; CK = LOW; CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD3NS 18 18 17 15 mA 6 Operating burst read: 1 bank active; BL = 4; tCK = tCK (MIN); Continuous READ bursts; Iout = 0mA; Address inputs are switching every 2 clock cycles; 50% data changing each burst IDD4R 130 125 115 105 mA 6 Operating burst write: 1 bank active; BL = 4; tCK = tCK (MIN); Continuous WRITE bursts; Address inputs are switching; 50% data changing each burst IDD4W 130 125 115 105 mA 6 tRC Auto refresh: Burst refresh; CKE = HIGH; Address and control inputs are switching; Data bus inputs are stable = tRC tCK tRFC = 138ns IDD5 170 170 170 170 mA 10 tRFC tREFI IDD5A 13 13 13 13 mA 10, 11 IDD8 15 15 15 15 μA 7, 13 = Deep power-down current: Address and control balls are stable; Data bus inputs are stable PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 31 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications – IDD Parameters Table 10: IDD Specifications and Conditions, –40°C to +105°C (x32) Notes 1–5 apply to all the parameters/conditions in this table; VDD/VDDQ = 1.70–1.95V Max Parameter/Condition Symbol -5 -54 -6 -75 Unit Notes Operating 1 bank active precharge current: (MIN); = tCK (MIN); CKE is HIGH; CS is HIGH between valid commands; Address inputs are switching every 2 clock cycles; Data bus inputs are stable IDD0 100 100 80 70 mA 6 Precharge power-down standby current: All banks idle; CKE is LOW; CS is HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD2P 1500 1500 1500 1500 μA 7, 8 Precharge power-down standby current: Clock stopped; All banks idle; CKE is LOW; CS is HIGH, CK = LOW, CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD2PS 1500 1500 1500 1500 μA 7 Precharge nonpower-down standby current: All banks idle; CKE = HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD2N 19 19 19 16 mA 9 Precharge nonpower-down standby current: Clock stopped; All banks idle; CKE = HIGH; CS = HIGH; CK = LOW, CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD2NS 13 13 12 12 mA 9 Active power-down standby current: 1 bank active; CKE = LOW; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD3P 9 9 9 9 mA 8 Active power-down standby current: Clock stopped; 1 bank active; CKE = LOW; CS = HIGH; CK = LOW; CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD3PS 9 9 9 9 mA Active nonpower-down standby: 1 bank active; CKE = HIGH; CS = HIGH; tCK = tCK (MIN); Address and control inputs are switching; Data bus inputs are stable IDD3N 21 21 20 19 mA 6 Active nonpower-down standby: Clock stopped; 1 bank active; CKE = HIGH; CS = HIGH; CK = LOW; CK# = HIGH; Address and control inputs are switching; Data bus inputs are stable IDD3NS 18 18 17 15 mA 6 Operating burst read: 1 bank active; BL = 4; CL = 3; tCK = tCK (MIN); Continuous READ bursts; Iout = 0mA; Address inputs are switching every 2 clock cycles; 50% data changing each burst IDD4R 150 145 140 120 mA 6 Operating burst write: One bank active; BL = 4; tCK = tCK (MIN); Continuous WRITE bursts; Address inputs are switching; 50% data changing each burst IDD4W 150 145 140 120 mA 6 tRC Auto refresh: Burst refresh; CKE = HIGH; Address and control inputs are switching; Data bus inputs are stable = tRC tCK tRFC = 138ns IDD5 170 170 170 170 mA 10 tRFC tREFI IDD5A 13 13 13 13 mA 10, 11 IDD8 15 15 15 15 μA 7, 13 = Deep power-down current: Address and control pins are stable; Data bus inputs are stable PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 32 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications – IDD Parameters Table 11: IDD6 Specifications and Conditions Notes 1–5, 7, and 12 apply to all the parameters/conditions in this table; VDD/VDDQ = 1.70–1.95V Parameter/Condition Symbol Self refresh: CKE = LOW; tCK = tCK (MIN); Address and control inputs are stable; Data bus inputs are stable Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Value Units n/a14 μA Full array, 85˚C 2000 μA Full array, 45˚C 900 μA 1/2 array, 85˚C 1450 μA 1/2 array, 45˚C 700 μA 1/4 array, 85˚C 1230 μA 1/4 array, 45˚C 600 μA 1/8 array, 85˚C 1090 μA 1/8 array, 45˚C 575 μA 1/16 array, 85˚C 1020 μA 1/16 array, 45˚C 550 μA Full array, 105˚C IDD6 1. All voltages referenced to VSS. 2. Tests for IDD characteristics may be conducted at nominal supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 3. Timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VDDQ/2 (or to the crossing point for CK/CK#). The output timing reference voltage level is VDDQ/2. 4. IDD is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time with the outputs open. 5. IDD specifications are tested after the device is properly initialized and values are averaged at the defined cycle rate. 6. MIN (tRC or tRFC) for IDD measurements is the smallest multiple of tCK that meets the minimum absolute value for the respective parameter. tRASmax for IDD measurements is the largest multiple of tCK that meets the maximum absolute value for tRAS. 7. Measurement is taken 500ms after entering into this operating mode to provide settling time for the tester. 8. VDD must not vary more than 4% if CKE is not active while any bank is active. 9. IDD2N specifies DQ, DQS, and DM to be driven to a valid high or low logic level. 10. CKE must be active (HIGH) during the entire time a REFRESH command is executed. From the time the AUTO REFRESH command is registered, CKE must be active at each rising clock edge until tRFC later. 11. This limit is a nominal value and does not result in a fail. CKE is HIGH during REFRESH command period (tRFC (MIN)) else CKE is LOW (for example, during standby). 12. Values for IDD6 85˚C are guaranteed for the entire temperature range. All other IDD6 values are estimated. 13. Typical values at 25˚C, not a maximum value. 14. Self refresh is not supported for AT (85˚C to 105˚C) operation. 33 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications – IDD Parameters Figure 17: Typical Self Refresh Current vs. Temperature 1600 Full Array 1/2 Array 1/4 Array 1/8 Array 1/16 Array 1500 1400 1300 1200 Current (µA) 1100 1000 900 800 700 600 500 400 300 200 100 -40 -30 -20 -10 0 15 30 45 60 75 90 Temperature ('C) PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 34 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications – AC Operating Conditions Electrical Specifications – AC Operating Conditions Table 12: Electrical Characteristics and Recommended AC Operating Conditions Notes 1–9 apply to all the parameters in this table; VDD/VDDQ = 1.70–1.95V -5 -54 Parameter Access window of DQ from CK/CK# CL = 3 -6 -75 Symbol Min Max Min Max Min Max Min Max Unit tAC 2.0 5.0 2.0 5.0 2.0 5.0 2.0 6.0 ns 2.0 6.5 2.0 6.5 2.0 6.5 2.0 6.5 tCK 5.0 – 5.4 – 6 – 7.5 – 12 – 12 – 12 – 12 – CK high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK CKE minimum pulse width (high and low) tCKE 1 – 1 – 1 – 1 – tCK 11 Auto precharge write recovery + precharge time tDAL – – – – – – – – – 12 DQ and DM input hold time relative to DQS (fast slew rate) tDH 0.48 – 0.54 – 0.6 – 0.8 – ns 13, 14, 15 DQ and DM input hold time relative to DQS (slow slew rate) tDH s 0.58 – 0.64 – 0.7 – 0.9 – ns DQ and DM input setup time relative to DQS (fast slew rate) tDS f 0.48 – 0.54 – 0.6 – 0.8 – ns DQ and DM input setup time relative to DQS (slow slew rate) tDS s 0.58 – 0.64 – 0.7 – 0.9 – ns tDIPW 1.8 – 1.9 – 2.1 – 1.8 – ns tDQSCK 2.0 5.0 2.0 5.0 2.0 5.0 2.0 6.0 ns 2.0 6.5 2.0 6.5 2.0 6.5 2.0 6.5 ns Clock cycle time CL = 2 Notes CL = 3 CL = 2 DQ and DM input pulse width (for each input) Access window of DQS from CK/CK# CL = 3 f CL = 2 ns tDQSH 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK DQS input low pulse width tDQSL 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK DQS–DQ skew, DQS to last DQ valid, per group, per access tDQSQ – 0.4 – 0.45 – 0.45 – 0.6 ns WRITE command to first DQS latching transition tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 0.75 1.25 tCK DQS falling edge from CK rising – hold time tDSH 0.2 – 0.2 – 0.2 – 0.2 – tCK DQS falling edge to CK rising – setup time tDSS 0.2 – 0.2 – 0.2 – 0.2 – tCK DQS input high pulse width PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 35 10 13, 14, 15 16 13, 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications – AC Operating Conditions Table 12: Electrical Characteristics and Recommended AC Operating Conditions (Continued) Notes 1–9 apply to all the parameters in this table; VDD/VDDQ = 1.70–1.95V -5 -54 Parameter -6 -75 Symbol Min Max Min Max Min Max Min Max Data valid output window (DVW) n/a tQH tDQSQ tQH tDQSQ tQH tDQSQ tQH tDQSQ Half-clock period tHP tCH, – tCH, – 5.0 – tCL Data-out High-Z window from CK/ CK# CL = 3 tHZ CL = 2 - - – tCH, – 5.0 6.5 – tCL - - Unit Notes ns 17 – ns 18 19, 20 – tCH, – 5.0 – 6.0 ns 6.5 – 6.5 – 6.5 ns tCL tCL Data-out Low-Z window from CK/CK# tLZ 1.0 – 1.0 – 1.0 – 1.0 – ns 19 Address and control input hold time (fast slew rate) tIH 0.9 – 1.0 – 1.1 – 1.3 – ns 15, 21 Address and control input hold time (slow slew rate) tIH S 1.1 – 1.2 – 1.3 – 1.5 – ns Address and control input setup time (fast slew rate) tIS F 0.9 – 1.0 – 1.1 – 1.3 – ns Address and control input setup time (slow slew rate) tIS S 1.1 – 1.2 – 1.3 – 1.5 – ns Address and control input pulse width tIPW 2.3 – 2.5 – 2.6 – tIS – ns LOAD MODE REGISTER command cycle time tMRD – 2 – 2 – 2 – tCK – ns DQ–DQS hold, DQS to first DQ to go nonvalid, per access F tQH 2 tHP - tQHS – tHP - tQHS tHP – - tQHS – + tIH tHP - tQHS 15, 21 16 13, 17 Data hold skew factor tQHS – 0.5 – 0.5 – 0.65 – 0.75 ns ACTIVE-to-PRECHARGE command tRAS 40 70,000 42 70,000 42 70,000 45 70,000 ns ACTIVE to ACTIVE/ACTIVE to AUTO REFRESH command period tRC 55 – 58.2 – 60 – 67.5 – ns Active to read or write delay tRCD 15 – 16.2 – 18 – 22.5 – ns Refresh period tREF – 64 – 64 – 64 – 64 ms 28 Average periodic refresh interval: 64Mb, 128Mb, and 256Mb (x32) tREFI – 15.6 – 15.6 – 15.6 – 15.6 μs 28 Average periodic refresh interval: 256Mb, 512Mb, 1Gb, 2Gb tREFI – 7.8 – 7.8 – 7.8 – 7.8 μs 28 AUTO REFRESH command period tRFC 72 – 72 – 72 – 72 – ns PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 36 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications – AC Operating Conditions Table 12: Electrical Characteristics and Recommended AC Operating Conditions (Continued) Notes 1–9 apply to all the parameters in this table; VDD/VDDQ = 1.70–1.95V -5 -54 Parameter -6 -75 Symbol Min Max Min Max Min Max Min Max Unit PRECHARGE command period tRP 15 – 16.2 – 18 – 22.5 – ns DQS read preamble CL = 3 tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCK CL = 2 tRPRE 0.5 1.1 0.5 1.1 0.5 1.1 0.5 1.1 tCK DQS read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK Active bank a to active bank b command tRRD 10 – 10.8 – 12 – 15 – ns Read of SRR to next valid command tSRC CL + 1 – CL + 1 – CL + 1 – CL + 1 – tCK SRR to read DQS write preamble DQS write preamble setup time DQS write postamble Write recovery time Internal WRITE-to-READ command delay Exit power-down mode to first valid command Exit self refresh to first valid command Notes: tSRR 2 – 2 – 2 – 2 – tCK tWPRE 0.25 – 0.25 – 0.25 – 0.25 – tCK tWPRES 0 – 0 – 0 – 0 – ns 23, 24 tWPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK 25 tWR 15 – 15 – 15 – 15 – ns 26 tWTR 2 – 2 – 1 – 1 – tCK tXP 2 – 2 – 1 – 1 – tCK tXSR 112.5 – 112.5 – 112.5 – 112.5 – ns 27 1. All voltages referenced to VSS. 2. All parameters assume proper device initialization. 3. Tests for AC timing and electrical AC and DC characteristics may be conducted at nominal supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage ranges specified. 4. The circuit shown below represents the timing reference load used in defining the relevant timing parameters of the device. It is not intended to be either a precise representation of the typical system environment or a depiction of the actual load presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to system environment. Specifications are correlated to production test conditions (generally a coaxial transmission line terminated at the tester electronics). For the half-strength driver with a nominal 10pF load, parameters tAC and tQH are expected to be in the same range. However, these parameters are not subject to production test but are estimated by design/characterization. Use of IBIS or other simulation tools for system design validation is suggested. I/O 50 20pF Full drive strength PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Notes I/O 50 10pF Half drive strength 37 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications – AC Operating Conditions 5. The CK/CK# input reference voltage level (for timing referenced to CK/CK#) is the point at which CK and CK# cross; the input reference voltage level for signals other than CK/ CK# is VDDQ/2. 6. A CK and CK# input slew rate ≥1 V/ns (2 V/ns if measured differentially) is assumed for all parameters. 7. All AC timings assume an input slew rate of 1 V/ns. 8. CAS latency definition: with CL = 2, the first data element is valid at (tCK + tAC) after the clock at which the READ command was registered; for CL = 3, the first data element is valid at (2 × tCK + tAC) after the first clock at which the READ command was registered. 9. Timing tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VDDQ/2 or to the crossing point for CK/CK#. The output timing reference voltage level is VDDQ/2. 10. Clock frequency change is only permitted during clock stop, power-down, or self refresh mode. 11. In cases where the device is in self refresh mode for tCKE, tCKE starts at the rising edge of the clock and ends when CKE transitions HIGH. 12. tDAL = (tWR/tCK) + (tRP/tCK): for each term, if not already an integer, round up to the next highest integer. 13. Referenced to each output group: for x16, LDQS with DQ[7:0]; and UDQS with DQ[15:8]. For x32, DQS0 with DQ[7:0]; DQS1 with DQ[15:8]; DQS2 with DQ[23:16]; and DQS3 with DQ[31:24]. 14. DQ and DM input slew rates must not deviate from DQS by more than 10%. If the DQ/DM/ DQS slew rate is less than 1.0 V/ns, timing must be derated: 50ps must be added to tDS and tDH for each 100 mV/ns reduction in slew rate. If the slew rate exceeds 4 V/ns, functionality is uncertain. 15. The transition time for input signals (CAS#, CKE, CS#, DM, DQ, DQS, RAS#, WE#, and addresses) are measured between VIL(DC) to VIH(AC) for rising input signals and VIH(DC) to VIL(AC) for falling input signals. 16. These parameters guarantee device timing but are not tested on each device. 17. The valid data window is derived by achieving other specifications: tHP (tCK/2), tDQSQ, and tQH (tHP - tQHS). The data valid window derates directly proportional with the clock duty cycle and a practical data valid window can be derived. The clock is provided a maximum duty cycle variation of 45/55. Functionality is uncertain when operating beyond a 45/55 ratio. 18. tHP (MIN) is the lesser of tCL (MIN) and tCH (MIN) actually applied to the device CK and CK# inputs, collectively. 19. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving (tHZ) or begins driving (tLZ). t 20. HZ (MAX) will prevail over tDQSCK (MAX) + tRPST (MAX) condition. 21. Fast command/address input slew rate ≥1 V/ns. Slow command/address input slew rate ≥0.5 V/ns. If the slew rate is less than 0.5 V/ns, timing must be derated: tIS has an additional 50ps per each 100 mV/ns reduction in slew rate from the 0.5 V/ns. tIH has 0ps added, therefore, it remains constant. If the slew rate exceeds 4.5 V/ns, functionality is uncertain. 22. READs and WRITEs with auto precharge must not be issued until tRAS (MIN) can be satisfied prior to the internal PRECHARGE command being issued. 23. This is not a device limit. The device will operate with a negative value, but system performance could be degraded due to bus turnaround. 24. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command. The case shown (DQS going from High-Z to logic low) applies when no WRITEs were previously in progress on the bus. If a previous WRITE was in progress, DQS could be HIGH during this time, depending on tDQSS. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 38 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Electrical Specifications – AC Operating Conditions 25. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance (bus turnaround) will degrade accordingly. 26. At least 1 clock cycle is required during tWR time when in auto precharge mode. 27. Clock must be toggled a minimum of two times during the tXSR period. 28. For the Automotive Temperature parts, tREF = tREF /2 and tREF I = tREF I/2 . PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 39 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Output Drive Characteristics Output Drive Characteristics Table 13: Target Output Drive Characteristics (Full Strength) Notes 1–2 apply to all values; characteristics are specified under best and worst process variations/conditions Pull-Down Current (mA) Pull-Up Current (mA) Voltage (V) Min Max Min Max 0.00 0.00 0.00 0.00 0.00 0.10 2.80 18.53 –2.80 –18.53 0.20 5.60 26.80 –5.60 –26.80 0.30 8.40 32.80 –8.40 –32.80 0.40 11.20 37.05 –11.20 –37.05 0.50 14.00 40.00 –14.00 –40.00 0.60 16.80 42.50 –16.80 –42.50 0.70 19.60 44.57 –19.60 –44.57 0.80 22.40 46.50 –22.40 –46.50 0.85 23.80 47.48 –23.80 –47.48 0.90 23.80 48.50 –23.80 –48.50 0.95 23.80 49.40 –23.80 –49.40 1.00 23.80 50.05 –23.80 –50.05 1.10 23.80 51.35 –23.80 –51.35 1.20 23.80 52.65 –23.80 –52.65 1.30 23.80 53.95 –23.80 –53.95 1.40 23.80 55.25 –23.80 –55.25 1.50 23.80 56.55 –23.80 –56.55 1.60 23.80 57.85 –23.80 –57.85 1.70 23.80 59.15 –23.80 –59.15 1.80 – 60.45 – –60.45 1.90 – 61.75 – –61.75 Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. Based on nominal impedance of 25Ω (full strength) at VDDQ/2. 2. The full variation in driver current from minimum to maximum, due to process, voltage, and temperature, will lie within the outer bounding lines of the I-V curves. 40 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Output Drive Characteristics Table 14: Target Output Drive Characteristics (Three-Quarter Strength) Notes 1–3 apply to all values; characteristics are specified under best and worst process variations/conditions Pull-Down Current (mA) Pull-Up Current (mA) Voltage (V) Min Max Min Max 0.00 0.00 0.00 0.00 0.00 0.10 1.96 12.97 –1.96 –12.97 0.20 3.92 18.76 –3.92 –18.76 0.30 5.88 22.96 –5.88 –22.96 0.40 7.84 25.94 –7.84 –25.94 0.50 9.80 28.00 –9.80 –28.00 0.60 11.76 29.75 –11.76 –29.75 0.70 13.72 31.20 –13.72 –31.20 0.80 15.68 32.55 –15.68 –32.55 0.85 16.66 33.24 –16.66 –33.24 0.90 16.66 33.95 –16.66 –33.95 0.95 16.66 34.58 –16.66 –34.58 1.00 16.66 35.04 –16.66 –35.04 1.10 16.66 35.95 –16.66 –35.95 1.20 16.66 36.86 –16.66 –36.86 1.30 16.66 37.77 –16.66 –37.77 1.40 16.66 38.68 –16.66 –38.68 1.50 16.66 39.59 –16.66 –39.59 1.60 16.66 40.50 –16.66 –40.50 1.70 16.66 41.41 –16.66 –41.41 1.80 – 42.32 – –42.32 1.90 – 43.23 – –43.23 Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. Based on nominal impedance of 37Ω (three-quarter drive strength) at VDDQ/2. 2. The full variation in driver current from minimum to maximum, due to process, voltage, and temperature, will lie within the outer bounding lines of the I-V curves. 3. Contact factory for availability of three-quarter drive strength. 41 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Output Drive Characteristics Table 15: Target Output Drive Characteristics (One-Half Strength) Notes 1–3 apply to all values; characteristics are specified under best and worst process variations/conditions Pull-Down Current (mA) Pull-Up Current (mA) Voltage (V) Min Max Min Max 0.00 0.00 0.00 0.00 0.00 0.10 1.27 8.42 –1.27 –8.42 0.20 2.55 12.30 –2.55 –12.30 0.30 3.82 14.95 –3.82 –14.95 0.40 5.09 16.84 –5.09 –16.84 0.50 6.36 18.20 –6.36 –18.20 0.60 7.64 19.30 –7.64 –19.30 0.70 8.91 20.30 –8.91 –20.30 0.80 10.16 21.20 –10.16 –21.20 0.85 10.80 21.60 –10.80 –21.60 0.90 10.80 22.00 –10.80 –22.00 0.95 10.80 22.45 –10.80 –22.45 1.00 10.80 22.73 –10.80 –22.73 1.10 10.80 23.21 –10.80 –23.21 1.20 10.80 23.67 –10.80 –23.67 1.30 10.80 24.14 –10.80 –24.14 1.40 10.80 24.61 –10.80 –24.61 1.50 10.80 25.08 –10.80 –25.08 1.60 10.80 25.54 –10.80 –25.54 1.70 10.80 26.01 –10.80 –26.01 1.80 – 26.48 – –26.48 1.90 – 26.95 – –26.95 Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. Based on nominal impedance of 55Ω (one-half drive strength) at VDDQ/2. 2. The full variation in driver current from minimum to maximum, due to process, voltage, and temperature, will lie within the outer bounding lines of the I-V curves. 3. The I-V curve for one-quarter drive strength is approximately 50% of one-half drive strength. 42 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Functional Description Functional Description The Mobile LPDDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O. Single read or write access for the device consists of a single 2n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and two corresponding n-bit-wide, one-half-clockcycle data transfers at the I/O. A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the device during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. The x16 device has two data strobes, one for the lower byte and one for the upper byte; the x32 device has four data strobes, one per byte. The LPDDR device operates from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. Commands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK. Read and write accesses to the device are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. The device provides for programmable READ or WRITE burst lengths of 2, 4, 8, or 16. An auto precharge function can be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard DDR SDRAM, the pipelined, multibank architecture of LPDDR supports concurrent operation, thereby providing high effective bandwidth by hiding row precharge and activation time. An auto refresh mode is provided, along with a power-saving power-down mode. Deep power-down mode is offered to achieve maximum power reduction by eliminating the power of the memory array. Data will not be retained after the device enters deep powerdown mode. Two self refresh features, temperature-compensated self refresh (TCSR) and partial-array self refresh (PASR), offer additional power savings. TCSR is controlled by the automatic on-chip temperature sensor. PASR can be customized using the extended mode register settings. The two features can be combined to achieve even greater power savings. The DLL that is typically used on standard DDR devices is not necessary on LPDDR devices. It has been omitted to save power. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Commands Commands A quick reference for available commands is provided in Table 16 and Table 17 (page 45), followed by a written description of each command. Three additional truth tables (Table 18 (page 51), Table 19 (page 53), and Table 20 (page 55)) provide CKE commands and current/next state information. Table 16: Truth Table – Commands CKE is HIGH for all commands shown except SELF REFRESH and DEEP POWER-DOWN; all states and sequences not shown are reserved and/or illegal Name (Function) CS# RAS# CAS# WE# Address Notes DESELECT (NOP) H X X X X 1 NO OPERATION (NOP) L H H ACTIVE (select bank and activate row) L L H H X 1 H Bank/row 2 READ (select bank and column, and start READ burst) L H L H Bank/column 3 WRITE (select bank and column, and start WRITE burst) L H L L Bank/column 3 BURST TERMINATE or DEEP POWER-DOWN (enter deep power-down mode) L H H L X 4, 5 PRECHARGE (deactivate row in bank or banks) L L H L Code 6 AUTO REFRESH (refresh all or single bank) or SELF REFRESH (enter self refresh mode) L L L H X 7, 8 LOAD MODE REGISTER L L L L Op-code 9 Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. DESELECT and NOP are functionally interchangeable. 2. BA0–BA1 provide bank address and A[0:I] provide row address (where I = the most significant address bit for each configuration). 3. BA0–BA1 provide bank address; A[0:I] provide column address (where I = the most significant address bit for each configuration); A10 HIGH enables the auto precharge feature (nonpersistent); A10 LOW disables the auto precharge feature. 4. Applies only to READ bursts with auto precharge disabled; this command is undefined and should not be used for READ bursts with auto precharge enabled and for WRITE bursts. 5. This command is a BURST TERMINATE if CKE is HIGH and DEEP POWER-DOWN if CKE is LOW. 6. A10 LOW: BA0–BA1 determine which bank is precharged. A10 HIGH: all banks are precharged and BA0–BA1 are “Don’t Care.” 7. This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW. 8. Internal refresh counter controls row addressing; in self refresh mode all inputs and I/Os are “Don’t Care” except for CKE. 9. BA0–BA1 select the standard mode register, extended mode register, or status register. 44 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Commands Table 17: DM Operation Truth Table Name (Function) Notes: DM DQ Notes Write enable L Valid 1, 2 Write inhibit H X 1, 2 1. Used to mask write data; provided coincident with the corresponding data. 2. All states and sequences not shown are reserved and/or illegal. DESELECT The DESELECT function (CS# HIGH) prevents new commands from being executed by the device. Operations already in progress are not affected. NO OPERATION The NO OPERATION (NOP) command is used to instruct the selected device to perform a NOP. This prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. LOAD MODE REGISTER The mode registers are loaded via inputs A[0:n]. See mode register descriptions in Standard Mode Register (page 60) and Extended Mode Register (page 64). The LOAD MODE REGISTER command can only be issued when all banks are idle, and a subsequent executable command cannot be issued until tMRD is met. ACTIVE The ACTIVE command is used to activate a row in a particular bank for a subsequent access. The values on the BA0 and BA1 inputs select the bank, and the address provided on inputs A[0:n] selects the row. This row remains active for accesses until a PRECHARGE command is issued to that bank. A PRECHARGE command must be issued before opening a different row in the same bank. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 45 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Commands Figure 18: ACTIVE Command CK# CK CKE HIGH CS# RAS# CAS# WE# Address Row BA0, BA1 Bank Don’t Care READ The READ command is used to initiate a burst read access to an active row. The values on the BA0 and BA1 inputs select the bank; the address provided on inputs A[I:0] (where I = the most significant column address bit for each configuration) selects the starting column location. The value on input A10 determines whether auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the READ burst; if auto precharge is not selected, the row will remain open for subsequent accesses. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Commands Figure 19: READ Command CK# CK CKE HIGH CS# RAS# CAS# WE# Address Column EN AP A10 DIS AP BA0, BA1 Bank Don’t Care Note: 1. EN AP = enable auto precharge; DIS AP = disable auto precharge. WRITE The WRITE command is used to initiate a burst write access to an active row. The values on the BA0 and BA1 inputs select the bank; the address provided on inputs A[I:0] (where I = the most significant column address bit for each configuration) selects the starting column location. The value on input A10 determines whether auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the WRITE burst; if auto precharge is not selected, the row will remain open for subsequent accesses. Input data appearing on the DQ is written to the memory array, subject to the DM input logic level appearing coincident with the data. If a given DM signal is registered LOW, the corresponding data will be written to memory; if the DM signal is registered HIGH, the corresponding data inputs will be ignored, and a WRITE will not be executed to that byte/column location. If a WRITE or a READ is in progress, the entire data burst must be complete prior to stopping the clock (see Clock Change Frequency (page 104)). A burst completion for WRITEs is defined when the write postamble and tWR or tWTR are satisfied. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 47 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Commands Figure 20: WRITE Command CK# CK CKE HIGH CS# RAS# CAS# WE# Address Column EN AP A10 DIS AP BA0, BA1 Bank Don’t Care Note: 1. EN AP = enable auto precharge; DIS AP = disable auto precharge. PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access a specified time (tRP) after the PRECHARGE command is issued. Input A10 determines whether one or all banks will be precharged, and in the case where only one bank is precharged, inputs BA0 and BA1 select the bank. Otherwise, BA0 and BA1 are treated as “Don’t Care.” After a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 48 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Commands Figure 21: PRECHARGE Command CK# CK CKE HIGH CS# RAS# CAS# WE# Address All banks A10 Single bank BA0, BA1 Bank Don’t Care Note: 1. If A10 is HIGH, bank address becomes “Don’t Care.” BURST TERMINATE The BURST TERMINATE command is used to truncate READ bursts with auto precharge disabled. The most recently registered READ command prior to the BURST TERMINATE command will be truncated, as described in READ Operation (page 69). The open page from which the READ was terminated remains open. AUTO REFRESH AUTO REFRESH is used during normal operation of the device and is analogous to CAS#BEFORE-RAS# (CBR) REFRESH in FPM/EDO DRAM. The AUTO REFRESH command is nonpersistent and must be issued each time a refresh is required. Addressing is generated by the internal refresh controller. This makes the address bits a “Don’t Care” during an AUTO REFRESH command. For improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. The auto refresh period begins when the AUTO REFRESH command is registered and ends tRFC later. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 49 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Commands SELF REFRESH The SELF REFRESH command is used to place the device in self refresh mode; self refresh mode is used to retain data in the memory device while the rest of the system is powered down. When in self refresh mode, the device retains data without external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH command, except that CKE is disabled (LOW). After the SELF REFRESH command is registered, all inputs to the device become “Don’t Care” with the exception of CKE, which must remain LOW. Micron recommends that, prior to self refresh entry and immediately upon self refresh exit, the user perform a burst auto refresh cycle for the number of refresh rows. Alternatively, if a distributed refresh pattern is used, this pattern should be immediately resumed upon self refresh exit. DEEP POWER-DOWN The DEEP POWER-DOWN (DPD) command is used to enter DPD mode, which achieves maximum power reduction by eliminating the power to the memory array. Data will not be retained when the device enters DPD mode. The DPD command is the same as a BURST TERMINATE command with CKE LOW. Figure 22: DEEP POWER-DOWN Command CK# CK CKE CS# RAS# CAS# WE# Address BA0, BA1 Don’t Care PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 50 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Truth Tables Truth Tables Table 18: Truth Table – Current State Bank n – Command to Bank n Notes 1–6 apply to all parameters in this table Current State CS# RAS# CAS# WE# Command/Action Any Idle Row active Read (auto precharge disabled) Write (auto precharge disabled) Notes H X X X DESELECT (NOP/continue previous operation) L H H H NO OPERATION (NOP/continue previous operation) L L H H ACTIVE (select and activate row) L L L H AUTO REFRESH L L L L LOAD MODE REGISTER 7 L H L H READ (select column and start READ burst) 10 L H L L WRITE (select column and start WRITE burst) 10 L L H L PRECHARGE (deactivate row in bank or banks) 8 L H L H READ (select column and start new READ burst) L H L L WRITE (select column and start WRITE burst) L L H L PRECHARGE (truncate READ burst, start PRECHARGE) 8 L H H L BURST TERMINATE 9 L H L H READ (select column and start READ burst) L H L L WRITE (select column and start new WRITE burst) L L H L PRECHARGE (truncate WRITE burst, start PRECHARGE) Notes: 7 10 10, 12 10, 11 10 8, 11 1. This table applies when CKEn - 1 was HIGH, CKEn is HIGH and after tXSR has been met (if the previous state was self refresh), after tXP has been met (if the previous state was powerdown), or after a full initialization (if the previous state was deep power-down). 2. This table is bank-specific, except where noted (for example, the current state is for a specific bank and the commands shown are supported for that bank when in that state). Exceptions are covered in the notes below. 3. Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row active: A row in the bank has been activated, and tRCD has been met. No data bursts/ accesses and no register accesses are in progress. Read: A READ burst has been initiated with auto precharge disabled and has not yet terminated or been terminated. Write: A WRITE burst has been initiated with auto precharge disabled and has not yet terminated or been terminated. 4. The states listed below must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP commands, or supported commands to the other bank, must be issued on any clock edge occurring during these states. Supported commands to any other bank are determined by that bank’s current state. Precharging: Starts with registration of a PRECHARGE command and ends when tRP is met. After tRP is met, the bank will be in the idle state. Row activating: Starts with registration of an ACTIVE command and ends when tRCD is met. After tRCD is met, the bank will be in the row active state. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 51 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Truth Tables Read with auto-precharge enabled: Starts with registration of a READ command with auto precharge enabled and ends when tRP has been met. After tRP is met, the bank will be in the idle state. Write with auto-precharge enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when tRP has been met. After tRP is met, the bank will be in the idle state. 5. The states listed below must not be interrupted by any executable command; DESELECT or NOP commands must be applied on each positive clock edge during these states. Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRFC is met. After tRFC is met, the device will be in the all banks idle state. Accessing mode register: Starts with registration of a LOAD MODE REGISTER command and ends when tMRD has been met. After tMRD is met, the device will be in the all banks idle state. 6. 7. 8. 9. 10. 11. 12. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Precharging all: Starts with registration of a PRECHARGE ALL command and ends when tRP is met. After tRP is met, all banks will be in the idle state. All states and sequences not shown are illegal or reserved. Not bank-specific; requires that all banks are idle, and bursts are not in progress. May or may not be bank-specific; if multiple banks need to be precharged, each must be in a valid state for precharging. Not bank-specific; BURST TERMINATE affects the most recent READ burst, regardless of bank. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. Requires appropriate DM masking. A WRITE command can be applied after the completion of the READ burst; otherwise, a BURST TERMINATE must be used to end the READ burst prior to asserting a WRITE command. 52 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Truth Tables Table 19: Truth Table – Current State Bank n – Command to Bank m Notes 1–6 apply to all parameters in this table Current State CS# RAS# CAS# WE# Command/Action Any Notes H X X X DESELECT (NOP/continue previous operation) L H H H NO OPERATION (NOP/continue previous operation) Idle X X X X Any command supported to bank m Row activating, active, or precharging L L H H ACTIVE (select and activate row) L H L H READ (select column and start READ burst) L H L L WRITE (select column and start WRITE burst) L L H L PRECHARGE L L H H ACTIVE (select and activate row) L H L H READ (select column and start new READ burst) L H L L WRITE (select column and start WRITE burst) L L H L PRECHARGE L L H H ACTIVE (select and activate row) L H L H READ (select column and start READ burst) L H L L WRITE (select column and start new WRITE burst) L L H L PRECHARGE L L H H ACTIVE (select and activate row) L H L H READ (select column and start new READ burst) L H L L WRITE (select column and start WRITE burst) L L H L PRECHARGE L L H H ACTIVE (select and activate row) L H L H READ (select column and start READ burst) L H L L WRITE (select column and start new WRITE burst) L L H L PRECHARGE Notes: 1. This table applies when CKEn - 1 was HIGH, CKEn is HIGH and after tXSR has been met (if the previous state was self refresh), after tXP has been met (if the previous state was powerdown) or after a full initialization (if the previous state was deep power-down). 2. This table describes alternate bank operation, except where noted (for example, the current state is for bank n and the commands shown are those supported for issue to bank m, assuming that bank m is in such a state that the given command is supported). Exceptions are covered in the notes below. 3. Current state definitions: Read (auto precharge disabled) Write (auto precharge disabled) Read (with auto precharge) Write (with auto precharge) 7 7 Idle: The bank has been precharged, and tRP has been met. Row active: A row in the bank has been activated, and tRCD has been met. No data bursts/ accesses and no register accesses are in progress. Read: A READ burst has been initiated and has not yet terminated or been terminated. Write: A WRITE burst has been initiated and has not yet terminated or been terminated. 3a. Both the read with auto precharge enabled state or the write with auto precharge enabled state can be broken into two parts: the access period and the precharge period. For read with auto precharge, the precharge period is defined as if the same burst was PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 53 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Truth Tables executed with auto precharge disabled and then followed with the earliest possible PRECHARGE command that still accesses all of the data in the burst. For write with auto precharge, the precharge period begins when tWR ends, with tWR measured as if auto precharge was disabled. The access period starts with registration of the command and ends when the precharge period (or tRP) begins. This device supports concurrent auto precharge such that when a read with auto precharge is enabled or a write with auto precharge is enabled, any command to other banks is supported, as long as that command does not interrupt the read or write data transfer already in process. In either case, all other related limitations apply (i.e., contention between read data and write data must be avoided). 3b. The minimum delay from a READ or WRITE command (with auto precharge enabled) to a command to a different bank is summarized below. From Command Minimum Delay (with Concurrent Auto Precharge) To Command WRITE with Auto Precharge READ or READ with auto precharge WRITE or WRITE with auto precharge PRECHARGE ACTIVE [1 + (BL/2)] tCK + tWTR (BL/2) tCK 1 tCK 1 tCK READ with Auto Precharge READ or READ with auto precharge WRITE or WRITE with auto precharge PRECHARGE ACTIVE (BL/2) × tCK [CL + (BL/2)] tCK 1 tCK 1 tCK 4. AUTO REFRESH and LOAD MODE REGISTER commands can only be issued when all banks are idle. 5. All states and sequences not shown are illegal or reserved. 6. Requires appropriate DM masking. 7. A WRITE command can be applied after the completion of the READ burst; otherwise, a BURST TERMINATE must be used to end the READ burst prior to asserting a WRITE command. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 54 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Truth Tables Table 20: Truth Table – CKE Notes 1–4 apply to all parameters in this table Current State CKEn - 1 CKEn COMMANDn ACTIONn Notes Active power-down L L X Maintain active power-down Deep power-down L L X Maintain deep power-down Precharge power-down L L X Maintain precharge power-down Self refresh L L X Maintain self refresh Active power-down L H DESELECT or NOP Exit active power-down 5 Deep power-down L H DESELECT or NOP Exit deep power-down 6 Precharge power-down L H DESELECT or NOP Exit precharge power-down Self refresh L H DESELECT or NOP Exit self refresh Bank(s) active H L DESELECT or NOP Active power-down entry All banks idle H L BURST TERMINATE Deep power-down entry All banks idle H L DESELECT or NOP Precharge power-down entry All banks idle H L AUTO REFRESH Self refresh entry H H See Table 19 (page 53) H H See Table 19 (page 53) Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 5, 7 1. CKEn is the logic state of CKE at clock edge n; CKEn - 1 was the state of CKE at the previous clock edge. 2. Current state is the state of the DDR SDRAM immediately prior to clock edge n. 3. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn. 4. All states and sequences not shown are illegal or reserved. 5. DESELECT or NOP commands should be issued on each clock edge occurring during the tXP or tXSR period. 6. After exiting deep power-down mode, a full DRAM initialization sequence is required. 7. The clock must toggle at least two times during the tXSR period. 55 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM State Diagram State Diagram Figure 23: Simplified State Diagram Power on Power applied Self refresh DPDX PRE Deep powerdown PREALL SRR Idle: all banks precharged LMR LMR EMR READ SRR DPD LMR READ SREFX SREF Auto refresh AREF CKEL CKEH Active powerdown Precharge powerdown ACT CKEH CKEL Row active Burst terminate READ WRITE BST WRITE WRITE A READ READ A READ WRITING READING WRITE WRITE A WRITING PRE READ A WRITE A PRE PRE PRE READ A READING Precharging Automatic sequence Command sequence ACT = ACTIVE AREF = AUTO REFRESH BST = BURST TERMINATE CKEH = Exit power-down CKEL = Enter power-down DPD = Enter deep power-down PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN DPDX = Exit deep power-down EMR = LOAD EXTENDED MODE REGISTER LMR = LOAD MODE REGISTER PRE = PRECHARGE PREALL = PRECHARGE all banks READ = READ w/o auto precharge 56 READ A = READ w/ auto precharge SREF = Enter self refresh SREFX = Exit self refresh SRR = STATUS REGISTER READ WRITE = WRITE w/o auto precharge WRITE A = WRITE w/ auto precharge Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Initialization Initialization Prior to normal operation, the device must be powered up and initialized in a predefined manner. Using initialization procedures other than those specified will result in undefined operation. If there is an interruption to the device power, the device must be re-initialized using the initialization sequence described below to ensure proper functionality of the device. To properly initialize the device, this sequence must be followed: 1. The core power (VDD) and I/O power (VDDQ) must be brought up simultaneously. It is recommended that VDD and VDDQ be from the same power source, or VDDQ must never exceed VDD. Standard initialization requires that CKE be asserted HIGH (see Figure 24 (page 58)). Alternatively, initialization can be completed with CKE LOW provided that CKE transitions HIGH tIS prior to T0 (see Figure 25 (page 59)). 2. When power supply voltages are stable and the CKE has been driven HIGH, it is safe to apply the clock. 3. When the clock is stable, a 200μs minimum delay is required by the Mobile LPDDR prior to applying an executable command. During this time, NOP or DESELECT commands must be issued on the command bus. 4. Issue a PRECHARGE ALL command. 5. Issue NOP or DESELECT commands for at least tRP time. 6. Issue an AUTO REFRESH command followed by NOP or DESELECT commands for at least tRFC time. Issue a second AUTO REFRESH command followed by NOP or DESELECT commands for at least tRFC time. Two AUTO REFRESH commands must be issued. Typically, both of these commands are issued at this stage as described above. 7. Using the LOAD MODE REGISTER command, load the standard mode register as desired. 8. Issue NOP or DESELECT commands for at least tMRD time. 9. Using the LOAD MODE REGISTER command, load the extended mode register to the desired operating modes. Note that the sequence in which the standard and extended mode registers are programmed is not critical. 10. Issue NOP or DESELECT commands for at least tMRD time. After steps 1–10 are completed, the device has been properly initialized and is ready to receive any valid command. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 57 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Initialization Figure 24: Initialize and Load Mode Registers (( )) VDD (( )) VDDQ T1 T0 CK# (( )) (( )) CK LVCMOS HIGH LEVEL CKE (( )) (( )) Command1 (( )) (( )) tCH tIS NOP2 tCL Ta0 Tb0 Tc0 Td0 Te0 Tf0 (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) tIH PRE NOP tCK (( )) (( )) (( )) (( )) AR AR (( )) (( )) LMR (( )) (( )) LMR (( )) (( )) ACT3 (( )) (( )) DM (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) Address (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) A10 (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) BA0, BA1 (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) DQS (( )) High-Z (( )) (( )) (( )) (( )) (( )) (( )) DQ (( )) High-Z (( )) (( )) (( )) (( )) (( )) (( )) tRFC4 tRFC4 tMRD4 (( )) (( )) tIS All banks tIS T = 200µs tIH tRP4 Power-up: VDD and CK stable Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN (( )) (( )) Op-code (( )) (( )) Row (( )) (( )) (( )) (( )) Op-code (( )) (( )) Row (( )) (( )) (( )) (( )) BA0 = L, BA1 = H (( )) (( )) Bank (( )) (( )) tIH Op-code tIS (( )) (( )) tIH Op-code tIS (( )) (( )) NOP3 tIH BA0 = L, BA1 = L Load standard mode register tMRD4 Load extended mode register Don’t Care 1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO REFRESH command; ACT = ACTIVE command. 2. NOP or DESELECT commands are required for at least 200μs. 3. Other valid commands are possible. 4. NOPs or DESELECTs are required during this time. 58 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Initialization Figure 25: Alternate Initialization with CKE LOW (( )) VDD (( )) VDDQ T1 T0 CK# (( )) (( )) CK tCH tCL tIS CKE 1 Command LVCMOS LOW level 2 NOP (( )) (( )) (( )) (( )) tIS Ta0 Tb0 Tc0 Td0 Te0 Tf0 (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) tIH NOP PRE (( )) (( )) (( )) (( )) AR AR (( )) (( )) LMR (( )) (( )) LMR (( )) (( )) ACT3 (( )) (( )) NOP3 T = 200µs Don’t Care Power up: VDD and CK stable Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO REFRESH command; ACT = ACTIVE command. 2. NOP or DESELECT commands are required for at least 200μs. 3. Other valid commands are possible. 59 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Standard Mode Register Standard Mode Register The standard mode register bit definition enables the selection of burst length, burst type, CAS latency (CL), and operating mode, as shown in Figure 26. Reserved states should not be used as this may result in setting the device into an unknown state or cause incompatibility with future versions of LPDDR devices. The standard mode register is programmed via the LOAD MODE REGISTER command (with BA0 = 0 and BA1 = 0) and will retain the stored information until it is programmed again, until the device goes into deep power-down mode, or until the device loses power. Reprogramming the mode register will not alter the contents of the memory, provided it is performed correctly. The mode register must be loaded when all banks are idle and no bursts are in progress, and the controller must wait tMRD before initiating the subsequent operation. Violating any of these requirements will result in unspecified operation. Figure 26: Standard Mode Register Definition BA1 BA0 An ... A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 n + 2 n + 1 n ... 10 9 8 Operating Mode 0 0 7 6 5 4 3 2 1 0 CAS Latency BT Burst Length 0 0 Standard mode register 0 1 Status register 0 0 1 0 Extended mode register 0 1 1 Reserved 0 M2 M1 M0 M3 = 0 M3 = 1 0 Reserved Reserved 0 1 2 2 1 0 4 4 0 1 1 8 8 1 0 0 16 16 1 0 1 Reserved Reserved 0 0 0 0 0 Normal operation 1 1 0 Reserved Reserved – – – – – All other states reserved 1 1 1 Reserved Reserved Mn ... M10 M9 M8 M7 Operating Mode M6 M5 M4 0 PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Standard mode register (Mx) Burst Length Mn + 2 Mn + 1 Mode Register Definition Note: Address bus 0 0 CAS Latency M3 Reserved 0 Sequential 1 Interleaved 0 0 1 Reserved 0 1 0 2 0 1 1 3 1 0 0 Reserved 1 0 1 Reserved 1 1 0 Reserved 1 1 1 Reserved Burst Type 1. The integer n is equal to the most significant address bit. 60 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Standard Mode Register Burst Length Read and write accesses to the device are burst-oriented, and the burst length (BL) is programmable. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst lengths of 2, 4, 8, or 16 locations are available for both sequential and interleaved burst types. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst will wrap when a boundary is reached. The block is uniquely selected by A[i:1] when BL = 2, by A[i:2] when BL = 4, by A[i:3] when BL = 8, and by A[i:4] when BL = 16, where Ai is the most significant column address bit for a given configuration. The remaining (least significant) address bits are used to specify the starting location within the block. The programmed burst length applies to both READ and WRITE bursts. Burst Type Accesses within a given burst can be programmed to be either sequential or interleaved via the standard mode register. The ordering of accesses within a burst is determined by the burst length, the burst type, and the starting column address. Table 21: Burst Definition Table Burst Length Order of Accesses Within a Burst Starting Column Address 2 Type = Interleaved 0 0-1 0-1 1 1-0 1-0 A0 4 8 16 Type = Sequential A3 A1 A0 0 0 0-1-2-3 0-1-2-3 0 1 1-2-3-0 1-0-3-2 1 0 2-3-0-1 2-3-0-1 1 1 3-0-1-2 3-2-1-0 A2 A1 A0 0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5 0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3 1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2 1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0 1 1 1 A2 A1 A0 PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 61 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Standard Mode Register Table 21: Burst Definition Table (Continued) Burst Length Order of Accesses Within a Burst Starting Column Address Type = Sequential Type = Interleaved 0 0 0 0 0-1-2-3-4-5-6-7-8-9-A-B-C-D-E-F 0-1-2-3-4-5-6-7-8-9-A-B-C-D-E-F 0 0 0 1 1-2-3-4-5-6-7-8-9-A-B-C-D-E-F-0 1-0-3-2-5-4-7-6-9-8-B-A-D-C-F-E 0 0 1 0 2-3-4-5-6-7-8-9-A-B-C-D-E-F-0-1 2-3-0-1-6-7-4-5-A-B-8-9-E-F-C-D 0 0 1 1 3-4-5-6-7-8-9-A-B-C-D-E-F-0-1-2 3-2-1-0-7-6-5-4-B-A-9-8-F-E-D-C 0 1 0 0 4-5-6-7-8-9-A-B-C-D-E-F-0-1-2-3 4-5-6-7-0-1-2-3-C-D-E-F-8-9-A-B 0 1 0 1 5-6-7-8-9-A-B-C-D-E-F-0-1-2-3-4 5-4-7-6-1-0-3-2-D-C-F-E-9-8-B-A 0 1 1 0 6-7-8-9-A-B-C-D-E-F-0-1-2-3-4-5 6-7-4-5-2-3-0-1-E-F-C-D-A-B-8-9 0 1 1 1 7-8-9-A-B-C-D-E-F-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0-F-E-D-C-B-A-9-8 1 0 0 0 8-9-A-B-C-D-E-F-0-1-2-3-4-5-6-7 8-9-A-B-C-D-E-F-0-1-2-3-4-5-6-7 1 0 0 1 9-A-B-C-D-E-F-0-1-2-3-4-5-6-7-8 9-8-B-A-D-C-F-E-1-0-3-2-5-4-7-6 1 0 1 0 A-B-C-D-E-F-0-1-2-3-4-5-6-7-8-9 A-B-8-9-E-F-C-D-2-3-0-1-6-7-4-5 1 0 1 1 B-C-D-E-F-0-1-2-3-4-5-6-7-8-9-A B-A-9-8-F-E-D-C-3-2-1-0-7-6-5-4 1 1 0 0 C-D-E-F-0-1-2-3-4-5-6-7-8-9-A-B C-D-E-F-8-9-A-B-4-5-6-7-0-1-2-3 1 1 0 1 D-E-F-0-1-2-3-4-5-6-7-8-9-A-B-C D-C-F-E-9-8-B-A-5-4-7-6-1-0-3-2 1 1 1 0 E-F-0-1-2-3-4-5-6-7-8-9-A-B-C-D E-F-C-D-A-B-8-9-6-7-4-5-2-3-0-1 1 1 1 1 F-0-1-2-3-4-5-6-7-8-9-A-B-C-D-E F-E-D-C-B-A-9-8-7-6-5-4-3-2-1-0 CAS Latency The CAS latency (CL) is the delay, in clock cycles, between the registration of a READ command and the availability of the first output data. The latency can be set to 2 or 3 clocks, as shown in Figure 27 (page 63). For CL = 3, if the READ command is registered at clock edge n, then the data will be nominally available at (n + 2 clocks + tAC). For CL = 2, if the READ command is registered at clock edge n, then the data will be nominally available at (n + 1 clock + tAC). PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 62 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Standard Mode Register Figure 27: CAS Latency CK# T0 T1 READ NOP T1n T2 T2n T3 T3n CK Command NOP NOP tAC CL - 1 CL = 2 DQS DQ CK# DOUT n DOUT n+1 DOUT n+2 DOUT n+3 T2n T3 T3n T0 T1 T2 READ NOP NOP CK Command NOP tAC CL - 1 CL = 3 DQS DOUT n DQ Transitioning Data DOUT n+1 Don’t Care Operating Mode The normal operating mode is selected by issuing a LOAD MODE REGISTER command with bits A[n:7] each set to zero, and bits A[6:0] set to the desired values. All other combinations of values for A[n:7] are reserved for future use. Reserved states should not be used because unknown operation or incompatibility with future versions may result. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 63 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Extended Mode Register Extended Mode Register The EMR controls additional functions beyond those set by the mode registers. These additional functions include drive strength, TCSR, and PASR. The EMR is programmed via the LOAD MODE REGISTER command with BA0 = 0 and BA1 = 1. Information in the EMR will be retained until it is programmed again, the device goes into deep power-down mode, or the device loses power. Figure 28: Extended Mode Register BA1 BA0 An n+ 2 n+ 1 n 0 1 En + 2 En + 1 0 0 0 1 1 0 1 1 En 0 – Mode Register Definition Standard mode register Status register Extended mode register Reserved ... 0 – E10 E9 0 0 – – Notes: E8 0 – E7–E0 Valid – ... A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 9 ... 10 Operation E7 0 0 0 0 1 1 1 1 8 7 E6 0 0 1 1 0 0 1 1 E5 0 1 0 1 0 1 0 1 6 DS 5 4 3 TCSR1 2 1 PASR A0 0 Address bus Extended mode register (Ex) Drive Strength Full strength 1/2 strength 1/4 strength 3/4 strength 3/4 strength Reserved Reserved Reserved Normal AR operation All other states reserved E2 0 0 E1 0 0 E0 0 1 Partial-Array Self Refresh Coverage Full array 1/2 array 0 0 1 1 1 1 1 1 0 0 1 1 0 1 0 1 0 1 1/4 array Reserved Reserved 1/8 array 1/16 array Reserved 1. On-die temperature sensor is used in place of TCSR. Setting these bits will have no effect. 2. The integer n is equal to the most significant address bit. Temperature-Compensated Self Refresh This device includes a temperature sensor that is implemented for automatic control of the self refresh oscillator. Programming the temperature-compensated self refresh (TCSR) bits will have no effect on the device. The self refresh oscillator will continue to refresh at the optimal factory-programmed rate for the device temperature. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 64 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Extended Mode Register Partial-Array Self Refresh For further power savings during self refresh, the partial-array self refresh (PASR) feature enables the controller to select the amount of memory to be refreshed during self refresh. The refresh options include: • • • • • Full array: banks 0, 1, 2, and 3 One-half array: banks 0 and 1 One-quarter array: bank 0 One-eighth array: bank 0 with row address most significant bit (MSB) = 0 One-sixteenth array: bank 0 with row address MSB = 0 and row address MSB - 1 = 0 READ and WRITE commands can still be issued to the full array during standard operation, but only the selected regions of the array will be refreshed during self refresh. Data in regions that are not selected will be lost. Output Drive Strength Because the device is designed for use in smaller systems that are typically point-topoint connections, an option to control the drive strength of the output buffers is provided. Drive strength should be selected based on the expected loading of the memory bus. The output driver settings are 25Ω, 37Ω, and 55Ω internal impedance for full, three-quarter, and one-half drive strengths, respectively. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 65 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Status Read Register Status Read Register The status read register (SRR) is used to read the manufacturer ID, revision ID, refresh multiplier, width type, and density of the device, as shown in Figure 30 (page 67). The SRR is read via the LOAD MODE REGISTER command with BA0 = 1 and BA1 = 0. The sequence to perform an SRR command is as follows: 1. The device must be properly initialized and in the idle or all banks precharged state. 2. Issue a LOAD MODE REGISTER command with BA[1:0] = 01 and all address pins set to 0. 3. Wait tSRR; only NOP or DESELECT commands are supported during the tSRR time. 4. Issue a READ command. 5. Subsequent commands to the device must be issued tSRC after the SRR READ command is issued; only NOP or DESELECT commands are supported during tSRC. SRR output is read with a burst length of 2. SRR data is driven to the outputs on the first bit of the burst, with the output being “Don’t Care” on the second bit of the burst. Figure 29: Status Read Register Timing CK# T0 T1 T2 CK Command T3 T4 T5 T6 tSRR PRE1 NOP LMR T8 tSRC NOP2 READ NOP NOP NOP Valid tRP Address 0 BA0 = 1 BA1 = 0 BA0, BA1 CL = 33 DQS Note 5 SRR out4 DQ Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Transitioning Data 1. All banks must be idle prior to status register read. 2. NOP or DESELECT commands are required between the LMR and READ commands (tSRR), and between the READ and the next VALID command (tSRC). 3. CAS latency is predetermined by the programming of the mode register. CL = 3 is shown as an example only. 4. Burst length is fixed to 2 for SRR regardless of the value programmed by the mode register. 5. The second bit of the data-out burst is a “Don’t Care.” 66 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Status Read Register Figure 30: Status Register Definition DQ31...DQ16 DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 S31..S16 S15 S14 S13 S12 S11 S10 S9 S8 15 14 13 12 11 10 9 31..16 8 Type Width Refresh Rate Density Reserved1 S15 S14 S13 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 1 0 1 0 1 1 1 0 1 S12 0 1 128Mb 256Mb 512Mb 1Gb 2Gb Reserved Reserved Reserved LPDDR LPDDR2 S10 0 0 0 S9 0 0 1 S8 0 1 0 0 1 1 1 1 0 0 1 1 0 1 0 1 1 1 S7 S6 S5 S4 S3 S2 S1 S0 0 7 6 5 4 3 2 1 Revision ID Manufacturer ID Density Device Type S11 0 1 Device Width 16 bits 32 bits Refresh Multiplier2 Reserved Reserved Reserved 2X 1X Reserved 0.25X Reserved Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN DQ0 S7 0 S6 0 S5 0 S4 0 ... ... ... ... X X X X I/O bus (CLK L->H edge) Status register Manufacturer ID Reserved S3 0 0 0 S2 0 0 0 S1 0 0 1 S0 0 1 0 0 0 0 0 0 1 1 1 1 1 0 0 1 0 1 0 0 1 1 1 Infineon Elpida Reserved Reserved Reserved Reserved 1 1 1 1 0 0 0 0 0 0 Winbond 0 1 1 1 0 1 ESMT NVM Reserved 1 1 0 0 Reserved 1 1 1 1 1 1 0 1 1 1 0 1 Reserved Reserved Micron Samsung Revision ID The manufacturer’s revision number starts at ‘0000’ and increments by ‘0001’ each time a change in the specification (AC timings or feature set), IBIS (pullup or pull-down characteristics), or process occurs. 1. Reserved bits should be set to 0 for future compatibility. 2. Refresh multiplier is based on the memory device on-board temperature sensor. Required average periodic refresh interval = tREFI × multiplier. 67 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Bank/Row Activation Bank/Row Activation Before any READ or WRITE commands can be issued to a bank within the device, a row in that bank must be opened. This is accomplished via the ACTIVE command, which selects both the bank and the row to be activated (see Figure 18 (page 46)). After a row is opened with the ACTIVE command, a READ or WRITE command can be issued to that row, subject to the tRCD specification. A subsequent ACTIVE command to a different row in the same bank can only be issued after the previous active row has been precharged. The minimum time interval between successive ACTIVE commands to the same bank is defined by tRC. A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row access overhead. The minimum time interval between successive ACTIVE commands to different banks is defined by tRRD. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 68 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM READ Operation READ Operation READ burst operations are initiated with a READ command, as shown in Figure 19 (page 47). The starting column and bank addresses are provided with the READ command, and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. For the READ commands used in the following illustrations, auto precharge is disabled. During READ bursts, the valid data-out element from the starting column address will be available following the CL after the READ command. Each subsequent data-out element will be valid nominally at the next positive or negative clock edge. Figure 31 (page 70) shows general timing for each possible CL setting. DQS is driven by the device along with output data. The initial LOW state on DQS is known as the read preamble; the LOW state coincident with the last data-out element is known as the read postamble. The READ burst is considered complete when the read postamble is satisfied. Upon completion of a burst, assuming no other commands have been initiated, the DQ will go to High-Z. A detailed explanation of tDQSQ (valid data-out skew), tQH (data-out window hold), and the valid data window is depicted in Figure 38 (page 77) and Figure 39 (page 78). A detailed explanation of tDQSCK (DQS transition skew to CK) and tAC (data-out transition skew to CK) is depicted in Figure 40 (page 79). Data from any READ burst can be truncated by a READ or WRITE command to the same or alternate bank, by a BURST TERMINATE command, or by a PRECHARGE command to the same bank, provided that the auto precharge mode was not activated. Data from any READ burst can be concatenated with or truncated with data from a subsequent READ command. In either case, a continuous flow of data can be maintained. The first data element from the new burst either follows the last element of a completed burst or the last desired data element of a longer burst that is being truncated. The new READ command should be issued x cycles after the first READ command, where x equals the number of desired data element pairs (pairs are required by the 2n-prefetch architecture). This is shown in Figure 32 (page 71). A READ command can be initiated on any clock cycle following a previous READ command. Nonconsecutive read data is shown in Figure 33 (page 72). Full-speed random read accesses within a page (or pages) can be performed as shown in Figure 34 (page 73). Data from any READ burst can be truncated with a BURST TERMINATE command, as shown in Figure 35 (page 74). The BURST TERMINATE latency is equal to the READ (CAS) latency; for example, the BURST TERMINATE command should be issued x cycles after the READ command, where x equals the number of desired data element pairs (pairs are required by the 2n-prefetch architecture). Data from any READ burst must be completed or truncated before a subsequent WRITE command can be issued. If truncation is necessary, the BURST TERMINATE command must be used, as shown in Figure 36 (page 75). A READ burst can be followed by, or truncated with, a PRECHARGE command to the same bank, provided that auto precharge was not activated. The PRECHARGE command should be issued x cycles after the READ command, where x equals the number of desired data element pairs. This is shown in Figure 37 (page 76). Following the PRECHARGE command, a subsequent PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 69 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM READ Operation command to the same bank cannot be issued until tRP is met. Part of the row precharge time is hidden during the access of the last data elements. Figure 31: READ Burst CK# T0 T1 READ NOP T1n T2 T2n T3 T3n T4 T5 NOP NOP T4 T5 NOP NOP CK Command Address NOP NOP Bank a, Col n CL = 2 DQS DQ CK# DOUT n1 T0 T1 T2 READ NOP NOP DOUT n + 1 DOUT n + 2 T2n T3 DOUT n + 3 T3n CK Command Address NOP Bank a, Col n CL = 3 DQS DQ DOUT n DOUT n + 1 DOUT n + 2 DOUT n + 3 Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Transitioning Data 1. DOUT n = data-out from column n. 2. BL = 4. 3. Shown with nominal tAC, tDQSCK, and tDQSQ. 70 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 32: Consecutive READ Bursts T0 T1 Command READ NOP Address Bank, Col n CK# T1n T2 T2n T3 T3n T4 T4n T5 T5n CK READ NOP NOP NOP Bank, Col b CL = 2 DQS DQ DOUT n1 DOUT n+1 T2n T0 T1 T2 Command READ NOP READ Address Bank, Col n CK# DOUT n+2 DOUT n+3 DOUT b T3 T3n T4 DOUT b+1 T4n DOUT b+2 T5 DOUT b+3 T5n CK NOP NOP NOP Bank, Col b CL = 3 DQS DOUT n DQ DOUT n+1 DOUT n+2 Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN DOUT n+3 DOUT b DOUT b+1 Transitioning Data 1. DOUTn (or b) = data-out from column n (or column b). 2. BL = 4, 8, or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts the first). 3. Shown with nominal tAC, tDQSCK, and tDQSQ. 4. Example applies only when READ commands are issued to same device. 71 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 33: Nonconsecutive READ Bursts T0 T1 Command READ NOP Address Bank, Col n CK# T1n T2 T2n T3 T3n T4 T4n T5 T5n T6 CK NOP NOP READ NOP NOP Bank, Col b CL = 2 CL = 2 DQS DOUT n1 DQ T0 T1 Command READ NOP Address Bank, Col n CK# T1n T2 DOUT n+1 T2n DOUT n+2 DOUT n+3 T3 T3n DOUT b T4 T4n T5 DOUT b+1 T5n DOUT b+2 T6 CK NOP READ NOP NOP NOP Bank, Col b CL = 3 CL = 3 DQS DOUT n DQ Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. 2. 3. 4. DOUT n+1 DOUT n+3 DOUT b Don’t Care Transitioning Data DOUT n+2 DOUTn (or b) = data-out from column n (or column b). BL = 4, 8, or 16 (if burst is 8 or 16, the second burst interrupts the first). Shown with nominal tAC, tDQSCK, and tDQSQ. Example applies when READ commands are issued to different devices or nonconsecutive READs. 72 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 34: Random Read Accesses T0 T1 Command READ READ READ READ Address Bank, Col n Bank, Col x Bank, Col b Bank, Col g CK# T1n T2 T2n T3 T3n T4 T4n T5 T5n CK NOP NOP CL = 2 DQS DQ CK# T0 T1 T1n DOUT n1 DOUT n+1 T2 T2n DOUT x DOUT x+1 DOUT b T3 T3n T4 DOUT b+1 T4n DOUT g T5 DOUT g+1 T5n CK Command READ READ READ READ Address Bank, Col n Bank, Col x Bank, Col b Bank, Col g NOP NOP CL = 3 DQS DOUT n DQ DOUT n+1 DOUT x Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. 2. 3. 4. DOUT x+1 DOUT b DOUT b+1 Transitioning Data DOUTn (or x, b, g) = data-out from column n (or column x, column b, column g). BL = 2, 4, 8, or 16 (if 4, 8, or 16, the following burst interrupts the previous). READs are to an active row in any bank. Shown with nominal tAC, tDQSCK, and tDQSQ. 73 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 35: Terminating a READ Burst T0 T1 Command READ1 BST2 Address Bank a, Col n CK# T1n T2 T2n T3 T4 T5 NOP NOP NOP T4 T5 NOP NOP CK NOP CL = 2 DQS DOUT n DQ3 CK# T0 DOUT n+1 T1 T2 T2n BST2 NOP T3 T3n CK Command READ1 Address Bank a, Col n NOP CL = 3 DQS DOUT n DQ3 DOUT n+1 Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. 2. 3. 4. 5. Transitioning Data BL = 4, 8, or 16. BST = BURST TERMINATE command; page remains open. DOUTn = data-out from column n. Shown with nominal tAC, tDQSCK, and tDQSQ. CKE = HIGH. 74 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 36: READ-to-WRITE CK# T0 T1 T1n T2 T2n T3 T3n T4 T4n T5 T5n CK Command Address READ1 BST2 WRITE1 NOP Bank, Col n NOP NOP Bank, Col b tDQSS CL = 2 (NOM) DQS DOUT n DOUT n+1 T1 T2 T2n BST2 NOP DQ3,4 DIN b DIN b+1 DIN b+2 DIN b+3 T4 T4n T5 T5n DM CK# T0 T3 T3n CK Command Address READ1 WRITE1 NOP Bank, Col n NOP Bank, Col b tDQSS CL = 3 (NOM) DQS DOUT n DQ3,4 DOUT n+1 DIN b DIN b+1 DM Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Transitioning Data 1. BL = 4 in the cases shown (applies for bursts of 8 and 16 as well; if BL = 2, the BST command shown can be NOP). 2. BST = BURST TERMINATE command; page remains open. 3. DOUTn = data-out from column n. 4. DINb = data-in from column b. 5. Shown with nominal tAC, tDQSCK, and tDQSQ. 6. CKE = HIGH. 75 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 37: READ-to-PRECHARGE CK# T0 T1 T1n T2 T2n T3 T3n T4 T5 NOP ACT3 CK Command READ1 Address Banka, Col n PRE2 NOP NOP Bank a, (a or all) Bank a, Row tRP CL = 2 DQS DQ4 CK# T0 T1 T1n DOUT n DOUT n+1 DOUT n+2 T2 T2n T3 DOUT n+3 T3n T4 T5 NOP ACT3 CK Command READ1 Address Banka, Col n PRE2 NOP NOP Bank a, (a or all) Bank a, Row tRP CL = 3 DQS DOUT n DQ4 DOUT n+1 DOUT n+2 Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. 2. 3. 4. 5. 6. 7. DOUT n+3 Transitioning Data BL = 4, or an interrupted burst of 8 or 16. PRE = PRECHARGE command. ACT = ACTIVE command. DOUTn = data-out from column n. Shown with nominal tAC, tDQSCK, and tDQSQ. READ-to-PRECHARGE equals 2 clocks, which enables 2 data pairs of data-out. A READ command with auto precharge enabled, provided tRAS (MIN) is met, would cause a precharge to be performed at x number of clock cycles after the READ command, where x = BL/2. 76 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 38: Data Output Timing – tDQSQ, tQH, and Data Valid Window (x16) CK# CK T1 T2 tHP1 tHP1 T2n T3 tHP1 tDQSQ2 tHP1 T3n tHP1 tDQSQ2 T4 tHP1 tDQSQ2 tDQSQ2 LDQS3 tQH5 tQH5 tQH5 Lower Byte DQ (Last data valid)4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ (First data no longer valid)4 tQH5 DQ (Last data valid)4 T2 T2n T3 T3n DQ (First data no longer valid)4 T2 T2n T3 T3n DQ[7:0] and LDQS, collectively6 T2 T2n T3 T3n Data valid window Data valid window Data valid window Data valid window tDQSQ2 tDQSQ2 tDQSQ2 tDQSQ2 UDQS3 tQH5 tQH5 tQH5 Upper Byte DQ (Last data valid)7 DQ7 DQ7 DQ7 DQ7 DQ7 DQ7 DQ (First data no longer valid)7 tQH5 DQ (Last data valid)7 T2 T2n DQ (First data no longer valid)7 T2 T2n collectively6 T2 T2n T3 T3n Data valid window Data valid window Data valid window Data valid window DQ[15:8] and UDQS, Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN T3 T3 T3n T3n 1. tHP is the lesser of tCL or tCH clock transition collectively when a bank is active. 2. tDQSQ is derived at each DQS clock edge and is not cumulative over time and begins with DQS transition and ends with the last valid DQ transition. 3. DQ transitioning after DQS transitions define the tDQSQ window. LDQS defines the lower byte and UDQS defines the upper byte. 4. DQ0, DQ1, DQ2, DQ3, DQ4, DQ5, DQ6, or DQ7. 5. tQH is derived from tHP: tQH = tHP - tQHS. 6. The data valid window is derived for each DQS transitions and is defined as tQH - tDQSQ. 7. DQ8, DQ9, DQ10, DQ11, DQ12, DQ13, DQ14, or DQ15. 77 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 39: Data Output Timing – tDQSQ, tQH, and Data Valid Window (x32) CK# CK T1 T2 tHP1 tHP1 T2n tHP1 T3 tHP1 T3n T4 tHP1 tHP1 tDQSQ2,3 tDQSQ2,3 tDQSQ2,3 tDQSQ2,3 tQH5 tQH5 tQH5 tQH5 DQS0/DQS1/DQS2/DQS3 T2n T3 T3n DQ (First data no longer valid) T2 T2n T3 T3n DQ and DQS, collectively6,7 T2 T2n T3 T3n Data valid window Data valid window Data valid window Data valid window Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Byte 3 T2 Byte 2 DQ (Last data valid) Byte 1 Byte 0 DQ (Last data valid)4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ4 DQ (First data no longer valid)4 1. tHP is the lesser of tCL or tCH clock transition collectively when a bank is active. 2. DQ transitioning after DQS transitions define the tDQSQ window. 3. tDQSQ is derived at each DQS clock edge and is not cumulative over time; it begins with DQS transition and ends with the last valid DQ transition. 4. Byte 0 is DQ[7:0], byte 1 is DQ[15:8], byte 2 is DQ[23:16], byte 3 is DQ[31:24]. 5. tQH is derived from tHP: tQH = tHP - tQHS. 6. The data valid window is derived for each DQS transition and is tQH - tDQSQ. 7. DQ[7:0] and DQS0 for byte 0; DQ[15:8] and DQS1 for byte 1; DQ[23:16] and DQS2 for byte 2; DQ[31:23] and DQS3 for byte 3. 78 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM READ Operation Figure 40: Data Output Timing – tAC and tDQSCK CK# T0 T1 T2 NOP1 NOP1 T3 T2n T3n T4 T4n T5 T5n T6 CK Command READ NOP1 NOP1 NOP1 NOP1 CL = 3 tLZ tHZ tDQSCK tDQSCK tRPRE tRPST DQS or LDQS/UDQS2 tLZ All DQ values, collectively3 T2 tAC4 T2n T3 tAC4 T3n T4 T4n T5 T5n tHZ Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. 2. 3. 4. Commands other than NOP can be valid during this cycle. DQ transitioning after DQS transitions define tDQSQ window. All DQ must transition by tDQSQ after DQS transitions, regardless of tAC. tAC is the DQ output window relative to CK and is the long-term component of DQ skew. 79 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM WRITE Operation WRITE Operation WRITE bursts are initiated with a WRITE command, as shown in Figure 20 (page 48). The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. For the WRITE commands used in the following illustrations, auto precharge is disabled. Basic data input timing is shown in Figure 41 (page 81) (this timing applies to all WRITE operations). Input data appearing on the data bus is written to the memory array subject to the state of data mask (DM) inputs coincident with the data. If DM is registered LOW, the corresponding data will be written; if DM is registered HIGH, the corresponding data will be ignored, and the write will not be executed to that byte/column location. DM operation is illustrated in Figure 42 (page 82). During WRITE bursts, the first valid data-in element will be registered on the first rising edge of DQS following the WRITE command, and subsequent data elements will be registered on successive edges of DQS. The LOW state of DQS between the WRITE command and the first rising edge is known as the write preamble; the LOW state of DQS following the last data-in element is known as the write postamble. The WRITE burst is complete when the write postamble and tWR or tWTR are satisfied. The time between the WRITE command and the first corresponding rising edge of DQS (tDQSS) is specified with a relatively wide range (75%–125% of one clock cycle). All WRITE diagrams show the nominal case. Where the two extreme cases (that is, tDQSS [MIN] and tDQSS [MAX]) might not be obvious, they have also been included. Figure 43 (page 83) shows the nominal case and the extremes of tDQSS for a burst of 4. Upon completion of a burst, assuming no other commands have been initiated, the DQ will remain High-Z and any additional input data will be ignored. Data for any WRITE burst can be concatenated with or truncated by a subsequent WRITE command. In either case, a continuous flow of input data can be maintained. The new WRITE command can be issued on any positive edge of clock following the previous WRITE command. The first data element from the new burst is applied after either the last element of a completed burst or the last desired data element of a longer burst that is being truncated. The new WRITE command should be issued x cycles after the first WRITE command, where x equals the number of desired data element pairs (pairs are required by the 2n-prefetch architecture). Figure 44 (page 84) shows concatenated bursts of 4. An example of nonconsecutive WRITEs is shown in Figure 45 (page 84). Full-speed random write accesses within a page or pages can be performed, as shown in Figure 46 (page 85). Data for any WRITE burst can be followed by a subsequent READ command. To follow a WRITE without truncating the WRITE burst, tWTR should be met, as shown in Figure 47 (page 86). Data for any WRITE burst can be truncated by a subsequent READ command, as shown in Figure 48 (page 87). Note that only the data-in pairs that are registered prior to the tWTR period are written to the internal array, and any subsequent data-in should be masked with DM, as shown in Figure 49 (page 88). Data for any WRITE burst can be followed by a subsequent PRECHARGE command. To follow a WRITE without truncating the WRITE burst, tWR should be met, as shown in Figure 50 (page 89). PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 80 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Data for any WRITE burst can be truncated by a subsequent PRECHARGE command, as shown in Figure 51 (page 90) and Figure 52 (page 91). Note that only the data-in pairs that are registered prior to the tWR period are written to the internal array, and any subsequent data-in should be masked with DM, as shown in Figure 51 (page 90) and Figure 52 (page 91). After the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. Figure 41: Data Input Timing CK# T01 T1 T1n T2 T2n T3 CK tDSH2 tDQSS tDSS3 tDSH2 tDSS3 tDQSL tDQSH tWPST DQS4 tWPRES tWPRE DIN b DQ DM5 tDS tDH Transitioning Data Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Don’t Care 1. 2. 3. 4. WRITE command issued at T0. tDSH (MIN) generally occurs during tDQSS (MIN). tDSS (MIN) generally occurs during tDQSS (MAX). For x16, LDQS controls the lower byte; UDQS controls the upper byte. For x32, DQS0 controls DQ[7:0], DQS1 controls DQ[15:8], DQS2 controls DQ[23:16], and DQS3 controls DQ[31:24]. 5. For x16, LDM controls the lower byte; UDM controls the upper byte. For x32, DM0 controls DQ[7:0], DM1 controls DQ[15:8], DM2 controls DQ[23:16], and DM3 controls DQ[31:24]. 81 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 42: Write – DM Operation CK T1 T0 CK# tIS tIH tIS tIH T2 tCH tCK T3 T4 WRITE2 NOP1 T4n T5 T5n T6 T7 NOP1 NOP11 T8 tCL CKE Command NOP1 ACTIVE tIS Address NOP1 Row Col n Row tIS BA0, BA1 PRE3 tIH tIS A10 NOP1 tIH All banks Note 4 One bank tIH Bank x Bank x5 Bank x tRCD tDQSS tWR (NOM) tRP tRAS DQS tWPRE tWPRES DIN n DQ6 tDQSL tDQSH tWPST DIN n+2 DM tDS Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN tDH Don’t Care Transitioning Data 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 in the case shown. 3. PRE = PRECHARGE. 4. Disable auto precharge. 5. Bank x at T8 is “Don’t Care” if A10 is HIGH at T8. 6. DINn = data-in from column n. 82 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 43: WRITE Burst CK# T0 T1 T2 WRITE1,2 NOP NOP T2n T3 CK Command Address tDQSS (NOM) NOP Bank a, Col b tDQSS DQS DIN b DQ3 DIN b+1 DIN b+2 DIN b+3 DM tDQSS (MIN) tDQSS DQS DQ3 DIN b DIN b+1 DIN b+2 DIN b+3 DIN b DIN b+1 DIN b+2 DM tDQSS (MAX) tDQSS DQS DQ3 DIN b+3 DM Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Transitioning Data 1. An uninterrupted burst of 4 is shown. 2. A10 is LOW with the WRITE command (auto precharge is disabled). 3. DINb = data-in for column b. 83 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 44: Consecutive WRITE-to-WRITE CK# T0 T1 WRITE1, 2 NOP T1n T2 T2n T3 T3n T4 T4n T5 CK Command Address WRITE1, 2 Bank, Col b tDQSS NOP NOP NOP Bank, Col n (NOM) DQS DIN b DQ3 DIN b+1 DIN b+2 DIN b+3 DIN n DIN n+1 DIN n+2 DIN n+3 DM Don’t Care Notes: Transitioning Data 1. Each WRITE command can be to any bank. 2. An uninterrupted burst of 4 is shown. 3. DINb (n) = data-in for column b (n). Figure 45: Nonconsecutive WRITE-to-WRITE CK# T0 T1 WRITE1, 2 NOP T1n T2 T2n T3 T4 T4n T5 T5n CK Command Address WRITE1,2 NOP Bank, Col b tDQSS NOP NOP Bank, Col n (NOM) DQS DIN b DQ3 DIN b+1 DIN b+2 DIN b+3 DIN n DIN n+1 DIN n+2 DIN n+3 DM Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Transitioning Data 1. Each WRITE command can be to any bank. 2. An uninterrupted burst of 4 is shown. 3. DINb (n) = data-in for column b (n). 84 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 46: Random WRITE Cycles CK# T0 T1 T1n T2 T2n T3 T3n T4 WRITE1,2 WRITE1,2 WRITE1,2 WRITE1,2 WRITE1,2 Bank, Col b Bank, Col x Bank, Col n Bank, Col a Bank, Col g T4n T5 T5n CK Command Address tDQSS NOP (NOM) DQS DIN b DQ3,4 DIN b’ DIN x DIN x’ DIN n DIN n’ DIN a DIN a’ DIN g DIN g’ DM Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. 2. 3. 4. Transitioning Data Each WRITE command can be to any bank. Programmed BL = 2, 4, 8, or 16 in cases shown. DINb (or x, n, a, g) = data-in for column b (or x, n, a, g). b' (or x, n, a, g) = the next data-in following DINb (x, n, a, g) according to the programmed burst order. 85 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 47: WRITE-to-READ – Uninterrupting CK# T0 T1 WRITE2,3 NOP T1n T2 T2n T3 T4 T5 READ NOP T5n T6 T6n CK Command1 NOP NOP NOP tWTR4 Address tDQSSnom Bank a, Col b Bank a, Col n tDQSS CL = 2 DQS DIN b DQ5 DIN b+1 DIN b+2 DIN b+3 DOUT n DOUT n+1 DOUT n DOUT n+1 DOUT n DOUT n+1 DM tDQSSmin tDQSS CL = 2 DQS DIN b DQ5 DIN b+1 DIN b+2 DIN b+3 DM tDQSSmax tDQSS CL = 2 DQS DIN b DQ5 DIN b+1 DIN b+2 DIN b+3 DM Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Transitioning Data 1. The READ and WRITE commands are to the same device. However, the READ and WRITE commands may be to different devices, in which case tWTR is not required and the READ command could be applied earlier. 2. A10 is LOW with the WRITE command (auto precharge is disabled). 3. An uninterrupted burst of 4 is shown. 4. tWTR is referenced from the first positive CK edge after the last data-in pair. 5. DINb = data-in for column b; DOUTn = data-out for column n. 86 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 48: WRITE-to-READ – Interrupting T0 T1 WRITE1,2 NOP CK# T1n T2 T2n T3 T4 T5 NOP NOP T5n T6 T6n CK Command NOP READ NOP tWTR3 Bank a, Col b Address tDQSS (NOM) Bank a, Col n tDQSS CL = 3 DQS4 DIN b+1 DIN b DQ5 DOUT n DOUT n+1 DM tDQSS (MIN) tDQSS CL = 3 DQS4 DIN b DQ5 DIN b+1 DOUT n DOUT n+1 DM tDQSS (MAX) tDQSS CL = 3 DQS4 DIN b DQ5 DIN b+1 DOUT n DOUT n+1 DM Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. 2. 3. 4. 5. Transitioning Data An interrupted burst of 4 is shown; 2 data elements are written. A10 is LOW with the WRITE command (auto precharge is disabled). tWTR is referenced from the first positive CK edge after the last data-in pair. DQS is required at T2 and T2n (nominal case) to register DM. DINb = data-in for column b; DOUTn = data-out for column n. 87 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 49: WRITE-to-READ – Odd Number of Data, Interrupting T0 T1 WRITE2 NOP CK# T1n T2 T2n T3 T4 T5 NOP NOP T5n T6 T6n CK Command1 NOP READ NOP tWTR3 Bank a, Col b Address tDQSS (NOM) Bank a, Col b tDQSS CL = 3 DQS4 DIN b DQ5 DOUT n DOUT n+1 DM tDQSS (MIN) tDQSS CL = 3 DQS4 DIN b DQ5 DOUT n DOUT n+1 DM tDQSS (MAX) tDQSS CL = 3 DQS4 DOUT n DIN b DQ5 DOUT n+1 DM Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. 2. 3. 4. 5. Transitioning Data An interrupted burst of 4 is shown; 1 data element is written, 3 are masked. A10 is LOW with the WRITE command (auto precharge is disabled). tWTR is referenced from the first positive CK edge after the last data-in pair. DQS is required at T2 and T2n (nominal case) to register DM. DINb = data-in for column b; DOUTn = data-out for column n. 88 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 50: WRITE-to-PRECHARGE – Uninterrupting T0 T1 WRITE2,4 NOP CK# T1n T2 T2n T3 T4 T5 T6 NOP NOP PRE3,4 NOP CK Command1 NOP tWR5 Bank a, Col b Address tDQSS (NOM) Bank (a or all) tDQSS DQS DIN b DQ6 DIN b+1 DIN b+2 DIN b+3 DM tDQSS (MIN) tDQSS DQS DIN b DQ6 DIN b+1 DIN b+2 DIN b+3 DIN b DIN b+1 DIN b+2 DM tDQSS tDQSS (MAX) DQS DQ6 DIN b+3 DM Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Transitioning Data 1. 2. 3. 4. An uninterrupted burst 4 of is shown. A10 is LOW with the WRITE command (auto precharge is disabled). PRE = PRECHARGE. The PRECHARGE and WRITE commands are to the same device. However, the PRECHARGE and WRITE commands can be to different devices; in this case, tWR is not required and the PRECHARGE command can be applied earlier. 5. tWR is referenced from the first positive CK edge after the last data-in pair. 6. DINb = data-in for column b. 89 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 51: WRITE-to-PRECHARGE – Interrupting T0 T1 WRITE2 NOP CK# T1n T2 T2n T3 T3n T4 T4n T5 T6 NOP NOP CK Command1 NOP NOP PRE3 tWR4 Bank a, Col b Address tDQSS (NOM) Bank (a or all) tDQSS DQS5 DIN b DQ6 DIN b+1 DM tDQSS (MIN) tDQSS DQS5 DIN b DQ6 DIN b+1 DM tDQSS (MAX) tDQSS DQS5 DIN b DQ6 DIN b+1 DM Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. 2. 3. 4. 5. 6. Transitioning Data An interrupted burst of 8 is shown; two data elements are written. A10 is LOW with the WRITE command (auto precharge is disabled). PRE = PRECHARGE. tWR is referenced from the first positive CK edge after the last data-in pair. DQS is required at T4 and T4n to register DM. DINb = data-in for column b. 90 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM WRITE Operation Figure 52: WRITE-to-PRECHARGE – Odd Number of Data, Interrupting CK# T0 T1 WRITE2 NOP T1n T2 T2n T3 T3n T4 T4n T5 T6 PRE3 NOP CK Command1 NOP NOP NOP tWR4 Address tDQSS (NOM) Bank a, Col b Bank (a or all) tDQSS DQS5, 6 DIN b DQ7 DM6 tDQSS (MIN) tDQSS DQS5, 6 DIN b DQ7 DM6 tDQSS (MAX) tDQSS DQS5, 6 DIN b DQ7 DM6 Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. 2. 3. 4. 5. 6. 7. Transitioning Data An interrupted burst of 8 is shown; one data element is written. A10 is LOW with the WRITE command (auto precharge is disabled). PRE = PRECHARGE. tWR is referenced from the first positive CK edge after the last data-in pair. DQS is required at T4 and T4n to register DM. If a burst of 4 is used, DQS and DM are not required at T3, T3n, T4, and T4n. DINb = data-in for column b. 91 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM PRECHARGE Operation PRECHARGE Operation The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access some specified time (tRP) after the PRECHARGE command is issued. Input A10 determines whether one or all banks will be precharged, and in the case where only one bank is precharged (A10 = LOW), inputs BA0 and BA1 select the bank. When all banks are precharged (A10 = HIGH), inputs BA0 and BA1 are treated as “Don’t Care.” After a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. A PRECHARGE command will be treated as a NOP if there is no open row in that bank (idle state), or if the previously open row is already in the process of precharging. Auto Precharge Auto precharge is a feature that performs the same individual bank PRECHARGE function described previously, without requiring an explicit command. This is accomplished by using A10 to enable auto precharge in conjunction with a specific READ or WRITE command. A precharge of the bank/row that is addressed with the READ or WRITE command is automatically performed upon completion of the READ or WRITE burst. Auto precharge is nonpersistent; it is either enabled or disabled for each individual READ or WRITE command. Auto precharge ensures that the precharge is initiated at the earliest valid stage within a burst. This earliest valid stage is determined as if an explicit PRECHARGE command was issued at the earliest possible time without violating tRAS (MIN), as described for each burst type in Table 19 (page 53). The READ with auto precharge enabled state or the WRITE with auto precharge enabled state can each be broken into two parts: the access period and the precharge period. The access period starts with registration of the command and ends where tRP (the precharge period) begins. For READ with auto precharge, the precharge period is defined as if the same burst was executed with auto precharge disabled, followed by the earliest possible PRECHARGE command that still accesses all the data in the burst. For WRITE with auto precharge, the precharge period begins when tWR ends, with tWR measured as if auto precharge was disabled. In addition, during a WRITE with auto precharge, at least one clock is required during tWR time. During the precharge period, the user must not issue another command to the same bank until tRP is satisfied. This device supports tRAS lock-out. In the case of a single READ with auto precharge or single WRITE with auto precharge issued at tRCD (MIN), the internal precharge will be delayed until tRAS (MIN) has been satisfied. Bank READ operations with and without auto precharge are shown in Figure 53 (page 94) and Figure 54 (page 95). Bank WRITE operations with and without auto precharge are shown in Figure 55 (page 96) and Figure 56 (page 97). PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 92 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Auto Precharge Concurrent Auto Precharge This device supports concurrent auto precharge such that when a READ with auto precharge is enabled or a WRITE with auto precharge is enabled, any command to another bank is supported, as long as that command does not interrupt the read or write data transfer already in process. This feature enables the precharge to complete in the bank in which the READ or WRITE with auto precharge was executed, without requiring an explicit PRECHARGE command, thus freeing the command bus for operations in other banks. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 93 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Auto Precharge Figure 53: Bank Read – With Auto Precharge CK# T1 T0 T2 T3 T4 T5 T5n T6 T6n T7 T8 CK tIS tCK tIH tCH tCL CKE tIS Command tIH NOP1 ACTIVE NOP1 READ2 NOP1 NOP1 NOP1 NOP1 ACTIVE tIH tIS Address Row A10 Row Col n Row Note 3 Row tIS tIS BA0, BA1 tIH tIH Bank x Bank x Bank x tRCD tRP tRAS tRC DM CL = 2 Case 1: tAC (MIN) and tDQSCK (MIN) tDQSCK tRPRE (MIN) tRPST DQS4 tLZ tAC (MIN) (MIN) DOUT n DQ4,5 tLZ Case 2: tAC (MAX) and tDQSCK (MAX) DOUT n+1 DOUT x DOUT x+1 (MIN) tRPRE tDQSCK tRPST (MAX) DQS4 DOUT n DQ4,5 tAC (MAX) DOUT n+1 DOUT x tHZ DOUT x+1 (MAX) Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Transitioning Data 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 in the case shown. 3. Enable auto precharge. 4. Refer to Figure 38 (page 77) and Figure 39 (page 78) for detailed DQS and DQ timing. 5. DOUT n = data-out from column n. 94 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Auto Precharge Figure 54: Bank Read – Without Auto Precharge CK# T1 T0 T2 T3 T4 T5 T5n READ2 NOP1 PRE3 T6 T6n T7 T8 NOP1 ACTIVE CK tIS tIH tIS tIH tCK tCH tCL CKE Command NOP1 NOP1 ACTIVE tIS Row Address Col n tIS A10 NOP1 tIH Row Row tIH All banks Row Note 4 One bank tIS BA0, BA1 tIH Bank x Bank x5 Bank x Bank x tRCD tRP tRAS6 tRC DM CL = 2 Case 1: tAC (MIN) and tDQSCK (MIN) tDQSCK tRPRE tRPST (MIN) DQS7 tLZ (MIN) tAC (MIN) DOUT n DQ7,8 tLZ DOUT n+1 DOUT n+2 DOUT n+3 (MIN) Case 2: tAC (MAX) and tDQSCK (MAX) tRPRE tDQSCK tRPST (MAX) DQS7 DOUT n DQ7,8 tAC (MAX) DOUT n+1 DOUT n+2 DOUT n+3 tHZ (MAX) Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Transitioning Data 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 in the case shown. 3. PRE = PRECHARGE. 4. Disable auto precharge. 5. Bank x at T5 is “Don’t Care” if A10 is HIGH at T5. 6. The PRECHARGE command can only be applied at T5 if tRAS (MIN) is met. 7. Refer to Figure 38 (page 77) and Figure 39 (page 78) for DQS and DQ timing details. 8. DOUTn = data out from column n. 95 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Auto Precharge Figure 55: Bank Write – With Auto Precharge CK# CK T1 T0 tIS T2 tIH tCK T3 tCH T4 T4n T5 T5n T6 T7 T8 tCL CKE tIS Command tIH NOP4 NOP4 ACTIVE tIS WRITE2 NOP4 NOP4 NOP4 NOP4 NOP4 tIH Address Row A10 Row Col n Note 3 tIS BA0, BA1 tIS tIH tIH Bank x Bank x tRCD tDQSS tWR (NOM) tRP tRAS DQS tWPRE tWPRES tDQSL tDQSH tWPST DIN b DQ1 DM tDS Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN tDH Don’t Care Transitioning Data 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 in the case shown. 3. Enable auto precharge. 4. DINn = data-out from column n. 96 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Auto Precharge Figure 56: Bank Write – Without Auto Precharge CK T1 T0 CK# tIS T2 tIH tCK T3 tCH T4 T4n T5 T5n T6 T7 T8 NOP1 NOP1 PRE3 tCL CKE tIS Command tIH NOP1 ACTIVE tIS Address NOP1 WRITE2 tIH Row Col n tIS A10 Row tIS BA0, BA1 NOP1 NOP1 tIH All banks Note 4 One bank tIH Bank x5 Bank x Bank x tWR tRCD tRP tRAS tDQSS (NOM) DQS tWPRES tWPRE tDQSL tDQSH tWPST DIN b DQ6 DM tDS tDH Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN Don’t Care Transitioning Data 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. BL = 4 in the case shown. 3. PRE = PRECHARGE. 4. Disable auto precharge. 5. Bank x at T8 is “Don’t Care” if A10 is HIGH at T8. 6. DOUTn = data-out from column n. 97 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM AUTO REFRESH Operation AUTO REFRESH Operation Auto refresh mode is used during normal operation of the device and is analogous to CAS#-BEFORE-RAS# (CBR) REFRESH in FPM/EDO DRAM. The AUTO REFRESH command is nonpersistent and must be issued each time a refresh is required. The addressing is generated by the internal refresh controller. This makes the address bits a “Don’t Care” during an AUTO REFRESH command. For improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. The auto refresh period begins when the AUTO REFRESH command is registered and ends tRFC later. Figure 57: Auto Refresh Mode T0 T2 T1 T3 T4 CK# CK tIS tCK tIH CKE tCL tIH NOP 2 NOP2 PRE Ta0 Ta1 )) (( )) Valid tIS Command1 tCH (( )) (( )) NOP2 AR )) (( )) NOP2, 3 AR4 (( )) (( )) Tb0 )) (( )) Valid (( )) (( )) NOP2, 3 Tb1 Tb2 NOP2 ACTIVE (( )) (( )) (( )) (( )) Row (( )) (( )) (( )) (( )) Row (( )) (( )) (( )) (( )) Bank DQS6 (( )) (( )) (( )) (( )) DQ6 (( )) (( )) (( )) (( )) DM6 (( )) (( )) (( )) (( )) Address All banks A10 One bank BA0, BA1 Bank(s)5 tRP tRFC tRFC4 Don’t Care Notes: 1. PRE = PRECHARGE; AR = AUTO REFRESH. 2. NOP commands are shown for ease of illustration; other commands may be valid during this time. CKE must be active during clock positive transitions. 3. NOP or COMMAND INHIBIT are the only commands supported until after tRFC time; CKE must be active during clock positive transitions. 4. The second AUTO REFRESH is not required and is only shown as an example of two backto-back AUTO REFRESH commands. 5. Bank x at T1 is “Don’t Care” if A10 is HIGH at this point; A10 must be HIGH if more than one bank is active (for example, must precharge all active banks). 6. DM, DQ, and DQS signals are all “Don’t Care”/High-Z for operations shown. Although it is not a JEDEC requirement, CKE must be active (HIGH) during the auto refresh period to provide support for future functional features. The auto refresh period begins when the AUTO REFRESH command is registered and ends tRFC later. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 98 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM SELF REFRESH Operation SELF REFRESH Operation The SELF REFRESH command can be used to retain data in the device while the rest of the system is powered down. When in self refresh mode, the device retains data without external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH command, except that CKE is disabled (LOW). All command and address input signals except CKE are “Don’t Care” during self refresh. During self refresh, the device is refreshed as defined in the extended mode register. (see Partial-Array Self Refresh (page 65).) An internal temperature sensor adjusts the refresh rate to optimize device power consumption while ensuring data integrity. (See Temperature-Compensated Self Refresh (page 64).) The procedure for exiting self refresh requires a sequence of commands. First, CK must be stable prior to CKE going HIGH. When CKE is HIGH, the device must have NOP commands issued for tXSR to complete any internal refresh already in progress. During SELF REFRESH operation, refresh intervals are scheduled internally and may vary. These refresh intervals may differ from the specified tREFI time. For this reason, the SELF REFRESH command must not be used as a substitute for the AUTO REFRESH command. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 99 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Power-Down Figure 58: Self Refresh Mode T0 CK# T1 CK1 tCH tIH tIS tCL tCKE tIS CKE1,2 tIS Command Ta01 Ta1 tCK tIS AR3 (( )) (( )) (( )) (( )) NOP (( )) (( )) Address (( )) (( )) (( )) (( )) DQS (( )) (( )) (( )) (( )) DQ (( )) (( )) (( )) (( )) DM (( )) (( )) (( )) (( )) tRP4 Tb0 (( )) (( )) (( )) tIH NOP (( )) (( )) Valid tIS tIH Valid tXSR5 Enter self refresh mode Exit self refresh mode Don’t Care Notes: 1. 2. 3. 4. 5. Clock must be stable, cycling within specifications by Ta0, before exiting self refresh mode. CKE must remain LOW to remain in self refresh. AR = AUTO REFRESH. Device must be in the all banks idle state prior to entering self refresh mode. Either a NOP or DESELECT command is required for tXSR time with at least two clock pulses. Power-Down Power-down is entered when CKE is registered LOW. If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates all input and output buffers, including CK and CK# and excluding CKE. Exiting power-down requires the device to be at the same voltage as when it entered power-down and received a stable clock. Note that the power-down duration is limited by the refresh requirements of the device. When in power-down, CKE LOW must be maintained at the inputs of the device, while all other input signals are “Don’t Care.” The power-down state is synchronously exited when CKE is registered HIGH (in conjunction with a NOP or DESELECT command). NOP or DESELECT commands must be maintained on the command bus until tXP is satisfied. See Figure 60 (page 102) for a detailed illustration of power-down mode. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 100 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Power-Down Figure 59: Power-Down Entry (in Active or Precharge Mode) CK# CK CKE CS# RAS#, CAS#, WE# Or CS# RAS#, CAS#, WE# Address BA0, BA1 Don’t Care PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 101 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Power-Down Figure 60: Power-Down Mode (Active or Precharge) T0 T1 T2 CK# CK tCK tIS tCH tIS tIH CKE tIS Command Address Ta1 tCKE NOP tIH Ta2 tXP1 (( )) (( )) NOP (( )) (( )) Valid DQS (( )) (( )) DQ (( )) (( )) DM (( )) (( )) Tb1 tCKE1 (( )) tIH Valid2 tIS tCL Ta0 (( )) (( )) Valid Valid Must not exceed refresh device limits No read/write Enter3 access in progress power-down mode Exit power-down mode Don’t Care 1. tCKE applies if CKE goes LOW at Ta2 (entering power-down); tXP applies if CKE remains HIGH at Ta2 (exit power-down). 2. If this command is a PRECHARGE (or if the device is already in the idle state), then the power-down mode shown is precharge power-down. If this command is an ACTIVE (or if at least 1 row is already active), then the power-down mode shown is active power-down. 3. No column accesses can be in progress when power-down is entered. Notes: Deep Power-Down Deep power-down (DPD) is an operating mode used to achieve maximum power reduction by eliminating power to the memory array. Data will not be retained after the device enters DPD mode. Before entering DPD mode the device must be in the all banks idle state with no activity on the data bus (tRP time must be met). DPD mode is entered by holding CS# and WE# LOW with RAS# and CAS# HIGH at the rising edge of the clock while CKE is LOW. CKE must be held LOW to maintain DPD mode. The clock must be stable prior to exiting DPD mode. To exit DPD mode, assert CKE HIGH with either a NOP or DESELECT command present on the command bus. After exiting DPD mode, a full DRAM initialization sequence is required. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 102 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Power-Down Figure 61: Deep Power-Down Mode CK# T0 T1 Ta1 Ta2 Ta3 )) (( )) CK tCKE tIS CKE Command1 Ta01 T2 ( ( (( )) DPD2 NOP All banks idle with no activity on the data bus T = 200µs (( )) (( )) NOP Enter deep power-down mode PRE3 NOP Exit deep power-down mode Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. Clock must be stable prior to CKE going HIGH. 2. DPD = deep power-down. 3. Upon exit of deep power-down mode, a full DRAM initialization sequence is required. 103 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Clock Change Frequency Clock Change Frequency One method of controlling the power efficiency in applications is to throttle the clock that controls the device. The clock can be controlled by changing the clock frequency or stopping the clock. The device enables the clock to change frequency during operation only if all timing parameters are met and all refresh requirements are satisfied. The clock can be stopped altogether if there are no DRAM operations in progress that would be affected by this change. Any DRAM operation already in process must be completed before entering clock stop mode; this includes the following timings: tRCD, tRP, tRFC, tMRD, tWR, and tRPST. In addition, any READ or WRITE burst in progress must be complete. (see READ Operation (page 69), and WRITE Operation (page 80).) CKE must be held HIGH with CK = LOW and CK# = HIGH for the full duration of the clock stop mode. One clock cycle and at least one NOP or DESELECT is required after the clock is restarted before a valid command can be issued. Figure 62: Clock Stop Mode Ta1 CK# CK CKE Ta2 Tb3 ( ( ) ) ( ( ) ) ( ( ) ) ( ( ) ) (( )) (( )) Command ( ( ) ) ( ( ) ) Address ( ( ) ) ( ( ) ) DQ, DQS (( )) (( )) NOP1 ( ( ) ) ( ( ) ) Valid (( )) (( )) (( )) (( )) (( )) ( ( ) ) 2 ( ( CMD ) ) CMD2 Tb4 Valid NOP NOP (( )) (( )) (( )) (( )) (( )) (( )) All DRAM activities must be complete Exit clock stop mode Enter clock stop mode Don’t Care Notes: PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 1. Prior to Ta1, the device is in clock stop mode. To exit, at least one NOP is required before issuing any valid command. 2. Any valid command is supported; device is not in clock suspend mode. 104 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Revision History Revision History Rev. M – 11/10 • Relaxed input capacitance for CK/CK# max from 3.0 to 3.5pF. This change was intended to have been included in the Rev K update. Rev. L – 09/10 • Added A14 to 168-ball diagram. • Added Package Block Diagram section. Rev. K – 08/10 • Added contact factory note for AT. • Deleted all rows except the full array row in the IDD6 table; added note 14 in the table. • Relaxed the input capacitance: command and address from 3.0 to 3.5pF. Rev. J – 06/10 • Updated AT IDD tables. Rev. H – 05/10 • Added reduced page mode. • Updated IDD tables. • Changed status to Production. Rev. G – 04/10 • Changed IOZ,min in table 5 from -5µA to -1.5µA and IOX,max from 5µA to 1.5µA. • Updated the 85°C IDD tables: – – – – – – – IDD0 x16 and x32 for -5, -54 and -6. IDD2N x16 and x32 for -5 and -54. IDD2NS x16 and x32 for -5 and -54. IDD3N x16 and x32 for all speed grades. IDD3NS x16 and x32 for -5, -54, and -6. IDD4R and Idd4W x16 and x32 for -5, -54, and -6. IDD5A x16 and x32 for all speed grades. Rev. F – 04/10 • Changed A9 from DQ23 to DQS3 in 240-Ball FBGA – 14mm x 14mm (Top View), x32 Only figure. Rev. E – 03/10 • Added configuration information to figure 1. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 105 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 2Gb: x16, x32 Mobile LPDDR SDRAM Revision History Rev. D – 12/09 • • • • Corrected typo on MT46H256M32L4 configuration (first page). JV package code changed from WFBGA to VFBGA. KZ package code changed from VFBGA to TFBGA. JV package code changed from VFBGA to WFBGA. Rev. C – 09/09 • Changed JQ package code to KZ throughout. • Added MTG-626, 152-ball package drawing with package code KZ. Rev. B – 08/09 • Added JV, JQ, and MC packaging. • Added L2 and L4 addressing. Rev. A – 07/09 • Initial release. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef83a73286 2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN 106 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved.
MT46H128M16LFCK-5 IT:A 价格&库存

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